Datasheet > MBRF1535CT-HE3/45

MBRF1535CT-HE3/45

更新时间： 2024-01-15 22:19:45

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	494K
描述
DIODE 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

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技术参数
数据手册

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MBRF1535CT-HE3/45 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-220AB
包装说明：	ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

MBRF1535CT-HE3/45 数据手册

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MBR(F,B)1535CT thru MBR(F,B)1560CT

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

100

MBR1535CT - MBR1545CT

MBR1550CT & MBR1560CT

Resistive or Inductive Load

T_J= 125 °C

0.1

0.01

_J= 75 °C

_J= 25 °C

100

0.001

100

150

Case Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics Per Diode

Figure 1. Forward Current Derating Curve

175

150

125

100

10 000

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

T_J= T_JMax.

8.3 ms Single Half Sine-Wave

1000

100

MBR1535CT - MBR1545CT

MBR1550CT & MBR1560CT

0.1

100

Reverse Voltage (V)

Number of Cycles at 60 Hz

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Figure 5. Typical Junction Capacitance Per Diode

100

T_J= 125 °C

Pulse Width = 300 µs

1 % Duty Cycle

T_J= 25 °C

0.1

MBR1535CT - MBR1545CT

MBR1550CT & MBR1560CT

0.1

0.01

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Instantaneous Forward Voltage (V)

0.1

100

t - Pulse Duration (s)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

Document Number: 88670

Revision: 08-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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