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MBRD10150CT PDF预览

MBRD10150CT

更新时间: 2024-11-21 18:04:35
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
3页 324K
描述
Schottky Diodes

MBRD10150CT 数据手册

 浏览型号MBRD10150CT的Datasheet PDF文件第2页浏览型号MBRD10150CT的Datasheet PDF文件第3页 
SMD Type  
Diodes  
Schottky Barrier Rectifier  
MBRD1040CT ~ MBRD10200CT  
TO-252  
Features  
2
Low power loss,high efficiency.  
High surge capacity  
For use in low voltage,high frequency inverters,  
free wheeling,and polarity protection applications.  
Metal silicon junction,majority carrier conduction.  
High current capability,low forward voltage drop.  
Guard ring for over voltage protection.  
1
3
1.Anode 2.Cathode 3. Anode  
Absolute Maximum Ratings and Electrical Characteristics  
Ratings at 25ambient temperature unless otherwise specified.  
MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD  
Parameter  
Symbol 1040 1045 1050 1060 1080 1090 10100 10150 10200 Unit  
CT  
40  
28  
40  
CT  
CT  
50  
35  
50  
CT  
60  
42  
60  
CT  
CT  
90  
63  
90  
CT  
100  
70  
CT  
150  
105  
150  
CT  
200  
140  
200  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
45  
80  
56  
80  
10  
V
A
31.5  
45  
Maximum DC Blocking Voltage  
Maximum average forward rectified current  
100  
IF(AV)  
Peak forward surge current:8.3ms  
single half sine-wave superimposed on  
rated load (JEDEC method)  
IFSM  
150  
Maximum forward voltage at 5A per leg  
0.65  
0.72  
0.85  
0.92  
V
F
V
0.1  
20  
T
J
= 25℃  
Maximum DC reverse current  
at rated DC blocking voltage  
IR  
mA  
TJ  
= 125℃  
Typical thermal resistance  
Junction Temperature  
Storage Temperature  
RθJC  
1.4  
/W  
150  
-55 to +150  
175  
T
j
-65 to +175  
Tstg  
1
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