5秒后页面跳转
MBRD10200CT PDF预览

MBRD10200CT

更新时间: 2024-11-19 14:54:11
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 140K
描述
SMD

MBRD10200CT 数据手册

 浏览型号MBRD10200CT的Datasheet PDF文件第2页浏览型号MBRD10200CT的Datasheet PDF文件第3页浏览型号MBRD10200CT的Datasheet PDF文件第4页 
®
MBRD10150CT – MBRD10200CT  
10A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
A
B
C
J
Guard Ring Die Construction for  
Transient Protection  
High Surge Current Capability  
Low Power Loss, High Efficiency  
Ideally Suited for Automatic Assembly  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
D
E
PIN 1  
2
3
K
G
H
L
P
P
DPAK/TO-252  
Min  
Mechanical Data  
Dim  
A
B
C
D
E
Max  
6.70  
5.55  
2.50  
1.25  
6.20  
3.40  
0.90  
0.60  
1.60  
0.55  
6.05  
Case: DPAK/TO-252, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
5.05  
PIN 1  
PIN 3  
2.10  
Case, PIN 2  
1.05  
Polarity: See Diagram  
Weight: 0.3 grams (approx.)  
Mounting Position: Any  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
5.48  
G
H
J
2.55  
0.55  
0.40  
K
L
0.95  
0.45  
P
2.30 Typical  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
MBRD10150CT  
MBRD10200CT  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 115°C  
Total Device  
Per Diode  
10  
5.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
100  
A
V
Forward Voltage per diode  
@IF = 5.0A  
VFM  
IRM  
CJ  
0.92  
Peak Reverse Current  
@TJ = 25°C  
10  
10  
µA  
mA  
At Rated DC Blocking Voltage  
@TJ = 125°C  
Typical Junction Capacitance (Note 1)  
200  
pF  
°C/W  
°C  
Thermal Resistance Junction to Ambient (Note 2)  
Thermal Resistance Junction to Case (Note 2)  
RθJA  
RθJC  
70  
2.5  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2019  
www.wontop.com  
1

与MBRD10200CT相关器件

型号 品牌 获取价格 描述 数据表
MBRD10200CTQ MCC

获取价格

Tape:2.5K/Reel,25K/Ctn;
MBRD10200D MDD

获取价格

SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS
MBRD10200S BL Galaxy Electrical

获取价格

10A,200V,Schottky Barrier Rectifiers
MBRD10200T MDD

获取价格

SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS
MBRD1020CT FRONTIER

获取价格

10A DUAL SCHOTTKY BARRIER RECTIFIERS
MBRD1020CT MCC

获取价格

10 Amp Schottky Rectifier 20V-100V
MBRD1020CT WON-TOP

获取价格

SMD
MBRD1020CT-TP MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 20V V(RRM), Silicon, TO-252, DPAK-3/2
MBRD1020S WON-TOP

获取价格

SMD
MBRD1030 JINANJINGHENG

获取价格

TO-252 SCHOTTKY BARRIER RECTIFIER