Datasheet > MBRD10200CT

MBRD10200CT

更新时间： 2024-10-03 14:54:11

品牌	Logo	应用领域
WON-TOP		/
页数	文件大小	规格书
4页	140K
描述
SMD

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRD10200CT 数据手册

MBRD10150CT – MBRD10200CT

10A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Surge Current Capability

Low Power Loss, High Efficiency

Ideally Suited for Automatic Assembly

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications



PIN 1

DPAK/TO-252

Min

Mechanical Data

Dim

Max

6.70

5.55

2.50

1.25

6.20

3.40

0.90

0.60

1.60

0.55

6.05



Case: DPAK/TO-252, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

5.05

PIN 1

PIN 3

2.10

Case, PIN 2

1.05



Polarity: See Diagram

Weight: 0.3 grams (approx.)

Mounting Position: Any

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

5.48

2.55

0.55

0.40

0.95

0.45

2.30 Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

MBRD10150CT

MBRD10200CT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

150

105

200

140

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 115°C

Total Device

Per Diode

5.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

100

Forward Voltage per diode

@I_F= 5.0A

VFM

IRM

0.92

Peak Reverse Current

@T_J= 25°C

µA

At Rated DC Blocking Voltage

@T_J= 125°C

Typical Junction Capacitance (Note 1)

200

°C/W

°C

Thermal Resistance Junction to Ambient (Note 2)

Thermal Resistance Junction to Case (Note 2)

RθJA

RθJC

2.5

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.

Revision: September, 2019

www.wontop.com

12 3 4

中文翻译

下载PDF

与MBRD10200CT相关器件

型号	品牌	获取价格	描述	数据表
MBRD10200CTQ	MCC	获取价格	Tape:2.5K/Reel,25K/Ctn;
MBRD10200D	MDD	获取价格	SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS
MBRD10200S	BL Galaxy Electrical	获取价格	10A,200V,Schottky Barrier Rectifiers
MBRD10200T	MDD	获取价格	SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS
MBRD1020CT	FRONTIER	获取价格	10A DUAL SCHOTTKY BARRIER RECTIFIERS
MBRD1020CT	MCC	获取价格	10 Amp Schottky Rectifier 20V-100V
MBRD1020CT	WON-TOP	获取价格	SMD
MBRD1020CT-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 20V V(RRM), Silicon, TO-252, DPAK-3/2
MBRD1020S	WON-TOP	获取价格	SMD
MBRD1030	JINANJINGHENG	获取价格	TO-252 SCHOTTKY BARRIER RECTIFIER