Datasheet > MBRD1015CTR

MBRD1015CTR

更新时间： 2024-11-19 14:55:07

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	190K
描述
肖特基整流管

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中文翻译

获取价格

数据手册

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MBRD1015CTR 数据手册

MBRD1015CTR-HAF

Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 150 V

Forward Current - 10 A

Features

• Center tap configuration

• Low forward voltage drop

• High frequency operation

• Halogen and Antimony Free(HAF),

RoHS compliant

TO-252 Plastic Package

1. Anode 2. Cathode 3.Anode

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load,

for capacitive load current derate by 20%.

Symbols

V_RRM

Value

150

Unit

Parameter

Maximum Repetitive Peak Reverse Voltage

Per Diode

Total Device

Average Forward Rectified Current

I_F(AV)

I_FSM

Peak Forward Surge Current 8.3 ms Half Sine-wave

Superimposed on Rated Load (JEDEC method)

100

Operating Junction Temperature Range

Storage Temperature Range

℃

T_j

- 55 to + 150

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJC

Unit

Value

3.6

Typical Thermal Resistance - Junction to Case

℃/W

Characteristics at Ta = 25℃

Parameter

Symbol

V_(BR)R

Min.

150

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 5 A

at I_F= 10 A

at I_F= 5 A , T_J=125℃

at I_F= 5 A , T_J=150℃

0.95

0.8

0.75

V_F

Reverse Current

at V_R= 150 V

at V_R= 150 V , T_J=125℃

at V_R= 150 V , T_J=150℃

I_R

Junction Capacitance

at V_R= 5 V, f = 1 MHz

200

C_j

1 / 3

Dated：30/03/2023 Rev: 04

12 3

中文翻译

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