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MBRB8H100T4G PDF预览

MBRB8H100T4G

更新时间： 2024-01-18 18:32:41
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关
页数 文件大小 规格书
6页 82K
描述
SWITCHMODE Schottky Power Rectifier

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中文翻译

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MBRB8H100T4G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-263包装说明：LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：1.51
应用：POWER外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.55 V
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：250 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：100 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBRB8H100T4G 数据手册

 浏览型号MBRB8H100T4G的Datasheet PDF文件第2页浏览型号MBRB8H100T4G的Datasheet PDF文件第3页浏览型号MBRB8H100T4G的Datasheet PDF文件第4页浏览型号MBRB8H100T4G的Datasheet PDF文件第5页浏览型号MBRB8H100T4G的Datasheet PDF文件第6页 
MBRB8H100T4G  
SWITCHMODEt  
Schottky Power Rectifier  
Surface Mount Power Package  
This series of Power Rectifiers employs the Schottky Barrier  
principle in a large metal-to-silicon power diode. State-of-the-art  
geometry features epitaxial construction with oxide passivation and  
metal overlay contact. Ideally suited for use in low voltage, high  
frequency switching power supplies, free wheeling diodes, and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
8 AMPERES, 100 VOLTS  
Features  
•ꢀGuardring for Stress Protection  
•ꢀLow Forward Voltage  
•ꢀ175°C Operating Junction Temperature  
•ꢀEpoxy Meets UL 94 V-0 @ 0.125 in  
•ꢀShort Heat Sink Tab Manufactured - Not Sheared!  
•ꢀThis is a Pb-Free Device  
1
4
3
(Pin 1 = No Connect)  
Mechanical Characteristics:  
MARKING  
DIAGRAM  
•ꢀCase: Epoxy, Molded, Epoxy Meets UL 94 V-0  
•ꢀWeight: 1.7 grams (approximately)  
•ꢀFinish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
4
AY WW  
1
•ꢀLead and Mounting Surface Temperature for Soldering Purposes:  
B8H100G  
3
260°C Max. for 10 Seconds  
2
•ꢀDevice Meets MSL1 Requirements  
D PAK  
CASE 418B  
PLASTIC  
•ꢀESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
MAXIMUM RATINGS  
A
= Assembly Location  
= Year  
= Work Week  
Y
WW  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RRM  
100  
V
B8H100 = Device Code  
= Pb-Free Package  
V
RWM  
V
G
R
Average Rectified Forward Current  
(Rated V ) T = 146°C  
I
8
A
A
F(AV)  
R
C
Peak Repetitive Forward Current  
(Rated V , Square Wave, 20 kHz)  
I
16  
FRM  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
R
T
C
= 146°C  
dimensions section on page 2 of this data sheet.  
Max Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz, 25°C)  
I
250  
A
FSM  
Operating Junction and Storage  
Temperature Range (Note 1)  
T , T  
J
-ꢁ65 to +175  
°C  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The heat generated must be less than the thermal conductivity from  
Junction-to-Ambient: dP /dT < 1/R .  
q
JA  
D
J
©ꢀ Semiconductor Components Industries, LLC, 2008  
January, 2008 - Rev. 2  
1
Publication Order Number:  
MBRB8H100/D  
 
123456

中文翻译

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MBRB8H100T4G 替代型号

型号 品牌 替代类型 描述 数据表
CSHDD8-100 CENTRAL

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