MBRB2560CT

更新时间： 2024-09-29 22:39:23

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
页数	文件大小	规格书
2页	100K
描述
SCHOTTKY RECTIFIER

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MBRB2560CT 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.74	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.75 V	最大非重复峰值正向电流：	150 A
最高工作温度：	150 °C	最大输出电流：	30 A
最大重复峰值反向电压：	60 V	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

MBRB2560CT 数据手册

NEW PRODUCT

MBRB2535CT THRU MBRB2560CT

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts

Forward Current - 30.0 Amperes

TO-263AB

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classifications 94V-0

♦ Dual rectifier construction, positive center-tap

♦ Metal silicon junction,

0.160 (4.06)

0.190 (4.83)

0.380 (9.65)

0.420 (10.67)

0.045 (1.14)

0.055 (1.40)

0.245 (6.22)

MIN

majority carrier conduction

♦ Low power loss,

high efficiency

♦ High current capability, low forward voltage drop

♦ High surge capability

0.047 (1.19)

0.320 (8.13)

0.360 (9.14)

0.055 (1.40)

0.575 (14.60)

0.625 (15.88)

♦ For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

♦ Guardring for overvoltage protection

♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

SEATING

PLATE

0.090 (2.29)

-T-

0.110 (2.79)

0.018 (0.46)

0.025 (0.64)

0.095 (2.41)

0.100 (2.54)

0.080 (2.03)

0.110 (2.79)

0.027 (0.686)

0.037 (0.940)

MECHANICAL DATA

Case: JEDEC TO-263AB molded plastic body

Terminals: Lead solderable per MIL-STD-750,

Method 2026

Polarity: As marked

Mounting Position: Any

PIN 1

PIN 2

K - HEATSINK

Dimensions in inches and (millimeters)

Weight: 0.08 ounce, 2.24 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS MBRB2535CT MBRB2545CT MBRB2550CT MBRB2560CT

UNITS

Volts

Amps

Maximum repetitive peak reverse voltage

Maximum working peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

Maximum average forward rectified current at T_C=130°C

I_(AV)

30.0

Peak repetitive forward current per leg at T_C=130°C

(rated V_R, square wave, 20 KH_Z)

I_FRM

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

I_RRM

150.0

Amps

Peak repetitive reverse surge current _{(NOTE 1)}

1.0

0.5

Maximum instantaneous forward voltage I_F=15.0A,T_C=25°C

0.75

per leg at: _{(NOTE 2)}

I_F=15.0A,T_C=25°C

I_F= 30A, T_C=25°C

I_F= 30A, T_C=125°C

0.65

V_F

0.82

0.73

Volts

Maximum instantaneous reverse current at

rated DC blocking voltage per leg _{(NOTE 2)}

T_C=25°C

I_R

0.2

1.0

T_C=125°C

40.0

50.0

Maximum thermal resistance _{(NOTE 3)}

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

R_ΘJC

dv/dt

T_J

1.5

°C/W

V/µs

°C

10,000

-65 to +150

-65 to +175

T_STG

°C

NOTES: (1) 2.0µs pulse width, f=1.0 KH_Z

(2) Pulse test: 300µs pulse width, 1% duty cycle

(3) Thermal resistance from junction to case per leg

4/98

中文翻译

下载PDF

与MBRB2560CT相关器件

型号	品牌	获取价格	描述	数据表
MBRB2560CT/31	VISHAY	获取价格	Rectifier Diode, Schottky, 15A, 60V V(RRM),
MBRB2560CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 15A, 60V V(RRM)
MBRB2560CT/81	VISHAY	获取价格	Rectifier Diode, Schottky, 15A, 60V V(RRM)
MBRB2560CT31	VISHAY	获取价格	15A, 60V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB2560CT81	VISHAY	获取价格	15A, 60V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB2560CT-E3/31	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, TO-263AB, ROHS CO
MBRB2560CT-E3/45	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBRB2560CTHE3/45	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBRB2560CT-HE3/45	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect
MBRB2560CTHE3/81	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC, 3 PIN, Rect

与MBRB2560CT相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

29
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

23
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

25
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

35

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRB2560CT

MBRB2560CT 技术参数

MBRB2560CT 数据手册

与MBRB2560CT相关器件

与MBRB2560CT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRB2560CT

MBRB2560CT 技术参数

MBRB2560CT 数据手册

与MBRB2560CT相关器件

与MBRB2560CT相关文章

您还可以找

您在本页遇到什么问题？