MBRA210LT3D

更新时间： 2024-09-24 22:51:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	50K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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MBRA210LT3D 数据手册

MBRA210LT3

Surface Mount

Schottky Power Rectifier

SMA Power Surface Mount Package

. . . employing the Schottky Barrier principle in a metal-to-silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes. Typical applications are ac/dc and dc-dc

converters, reverse battery protection, and “Oring” of multiple supply

voltages and any other application where performance and size are

critical.

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

2 AMPERES

10 VOLTS

• Ultra Low V

• 1st in the Market Place with a 10 V Schottky Rectifier

• Compact Package with J-Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

MARKING

DIAGRAM

• Guardring for Over-Voltage Protection

• Optimized for Low Forward Voltage

B2L1

SMA

CASE 403D

PLASTIC

Mechanical Characteristics:

• Case: Molded Epoxy

B2L1 = Device Code

• Epoxy Meets UL94, V at 1/8″

• Weight: 70 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

ORDERING INFORMATION

Device

Package

Shipping

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

MBRA210LT3

SMA

5000/Tape & Reel

• Polarity: Polarity Band Indicates Cathode Lead

• ESD Ratings: Machine Model = C

ESD Ratings: Human Body Model = 3A

• Available in 12 mm Tape, 5000 Units per 13 inch Reel

• Marking: B2L1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

Average Rectified Forward Current

2.0

(At Rated V , T = 110°C)

Non-Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

160

FSM

Storage/Operating Case Temperature

Operating Junction Temperature

, T

-55 to

+125

°C

stg

Voltage Rate of Change

dv/dt

10,000

V/ms

(Rated V , T = 25°C)

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

December, 2002 - Rev. 3

MBRA210LT3/D

12 3 4 5 6 7 8

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