5秒后页面跳转
MBR860 PDF预览

MBR860

更新时间: 2024-02-05 20:18:42
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管瞄准线功效局域网
页数 文件大小 规格书
2页 234K
描述
Schottky Barrier Rectifiers

MBR860 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.36
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.53 V
JEDEC-95代码:TO-277BJESD-30 代码:R-PDSO-F3
湿度敏感等级:1最大非重复峰值正向电流:275 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:60 V最大反向电流:500 µA
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

MBR860 数据手册

 浏览型号MBR860的Datasheet PDF文件第2页 
MBR830-MBR8100  
Schottky Barrier Rectifiers  
VOLTAGE RANGE: 30 - 100 V  
CURRENT: 8.0 A  
TO-220AC  
Features  
4.5± 0.2  
10.2± 0.2  
1.4± 0.2  
High surge capacity.  
φ 3.8± 0.15  
For use in low voltage, high frequency inverters, free  
1wheeling, and polarity protection applications.  
11  
Metal silicon junction, majority carrier conduction.  
High current capacity, low forward voltage drop.  
The plastic material carries U/L recognition 94V-0  
PIN  
2
1
2.6± 0.2  
Mechanical Data  
0.9± 0.1  
Case:JEDEC TO-220AC,molded plastic body  
0.5± 0.1  
5.0± 0.1  
Polarity: As marked  
Position: Any  
Dimensions in millimeters  
Weight: 0.064 ounces,1.81 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
ambient temperature unless otherwise specified.  
Ratings at 25  
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.  
MBR MBR MBR MBR MBR MBR MBR MBR  
UNITS  
830  
835  
840 845  
850  
860  
880 8100  
Maximum recurrent peak reverse voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
30  
35  
40  
28  
40  
45  
32  
45  
50  
60  
80  
56  
80  
100  
70  
V
V
V
21  
25  
35  
42  
Maximum DC blocking voltage  
30  
35  
50  
60  
100  
Maximum average forw ard total device11111111  
IF(AV)  
IFSM  
8.0  
A
A
m rectified current @TC = 125°C  
Peak forw ard surge current 8.3ms single half  
150  
b
sine-w ave superimposed on rated load  
)
)
Maximum forw ard  
voltage  
(IF=8.0A,TC=125  
0.57  
0.70  
-
(I  
0.80  
0.95  
0.85  
-
F=8.0A,TC=25  
0.70  
0.84  
V
VF  
(Note 1)  
(IF=16A,TC=25  
)
Maximum reverse current  
at rated DC blocking voltage  
@TC=25  
0.1  
15  
0.5  
50  
IR  
m A  
@TC=125  
Maximum thermal resistance (Note 2)  
Operating junction temperature range  
Storage temperature range  
3.0  
RθJC  
TJ  
K/W  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.  
2. Thermal resistance f rom junction to case.  
http://www.luguang.cn  
mail:lge@luguang.cn  

与MBR860相关器件

型号 品牌 获取价格 描述 数据表
MBR860CT KERSEMI

获取价格

Exceeds environmental standards of MIL-S-19500/228
MBR860CT PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIER
MBR860D PANJIT

获取价格

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
MBR860DC PANJIT

获取价格

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
MBR860F PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR860FCT PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIER
MBR860MFS ONSEMI

获取价格

SWITCHMODE Power Rectifiers
MBR860MFST1G ONSEMI

获取价格

SWITCHMODE Power Rectifiers
MBR860MFST3G ONSEMI

获取价格

SWITCHMODE Power Rectifiers
MBR860ULPS-TP-HF MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, TO-277B,