Datasheet > MBR2535CT_1

MBR2535CT_1

更新时间： 2024-02-17 02:42:35

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	60K
描述
30A SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR2535CT_1 数据手册

MBR2535CT - MBR2560CT

30A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

TO-220AB

Dim

Min

14.48

10.00

2.54

5.90

2.80

12.70

2.40

0.69

3.54

4.07

1.15

0.30

2.04

Max

15.75

10.40

3.43

6.40

3.93

14.27

2.70

0.93

3.78

4.82

1.39

0.50

2.79

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

Lead Free Finish, RoHS Compliant (Note 4)

Mechanical Data

Case: TO-220AB

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish – Bright Tin. Solderable per

MIL-STD-202, Method 208

Pin 1

Pin 2

Pin 3

Polarity: As Marked on Body

Marking: Type Number

Case

All Dimensions in mm

Weight: 2.24 grams (approx.)

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit

V_RRM

V_RWM

V_R

V_R(RMS)

I_O

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

@ T_C= 130°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

I_RRM

150

Peak Repetitive Reverse Surge Current (Note 3)

1.0

0.5

Forward Voltage Drop

@ I_F= 15.0A, T_C

@ I_F= 15.0A, T_C= 125°C

@ I_F= 30.0A, T_C25°C

@ I_F= 30.0A, T_C= 125°C

= 25°C

0.82

0.73

0.75

0.65

V_FM

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C25°C

0.2

1.0

I_RM

@ T_C= 125°C

C_T

Typical Total Capacitance (Note 2)

750

500

°C/W

°C

R_qJC

Typical Thermal Resistance Junction to Case (Note 1)

Operating and Storage Temperature Range

1.5

T_j,T_STG

-65 to +150

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

3. 2.0ms pulse width, f = 1.0KHz.

4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.

DS31036 Rev. 6 - 2

1 of 2

MBR2535CT - MBR2560CT

www.diodes.com

ã Diodes Incorporated

中文翻译

下载PDF

与MBR2535CT_1相关器件

型号	品牌	获取价格	描述	数据表
MBR2535CT_10	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
MBR2535CT_10	TSC	获取价格	25.0 AMPS. Schottky Barrier Rectifiers
MBR2535CT_11	TSC	获取价格	20.0 AMPS. Schottky Barrier Rectifiers
MBR2535CT_11	FAIRCHILD	获取价格	25 Ampere Schottky Barrier Rectifiers
MBR2535CT_13	TSC	获取价格	25.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency
MBR2535CT_14	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR2535CT-1	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR2535CT-1	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-262AA, PLASTIC
MBR2535CT-1-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon, TO-262AA, GREEN, PLASTIC, TO-
MBR2535CT-1P	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A

与MBR2535CT_1相关文章

芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

56
REF03GPZ资料解读：主要特征、技术参数、应用场景
2024-08-05

125
一文带你了解DS28E40主要特征、安全特性、应用场景
2024-07-30

172
RT9172资料手册解读：关节特性、引脚信息、参数说明
2024-07-30

154

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR2535CT_1

MBR2535CT_1 数据手册

与MBR2535CT_1相关器件

与MBR2535CT_1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR2535CT_1

MBR2535CT_1 数据手册

与MBR2535CT_1相关器件

与MBR2535CT_1相关文章

您还可以找

您在本页遇到什么问题？