Datasheet > MBR2535CT_10

MBR2535CT_10

更新时间： 2024-02-27 13:46:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	134K
描述
Dual Common-Cathode Schottky Rectifier

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中文翻译

获取价格

数据手册

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MBR2535CT_10 数据手册

MBR(F,B)2535CT thru MBR(F,B)2560CT

Vishay General Semiconductor

Dual Common-Cathode Schottky Rectifier

FEATURES

TO-220AB

ITO-220AB

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

MBR25xxCT

MBRF25xxCT

PIN 1

PIN 2

CASE

• Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB

package)

PIN 1

PIN 2

PIN 3

• Complant to RoHS 2002/95/EC and in accordance to

WEEE 2002/96/EC

TO-263AB

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

MBRB25xxCT

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class 1A

whisker test, HE3 suffix for high reliability grade (AEC-Q101

qualified), meets JESD 201 class 2 whisker test

I_F(AV)

2 x 15 A

V_RRM

I_FSM

35 V to 60 V

150 A

V_F

0.73 V at 30 A, 0.65 V at 15 A

150 °C

Polarity: As marked

T_Jmax.

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

total device

per diode

Maximum average forward rectified current

at T_C= 130 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

I_RRM

E_RSM

150

Peak repetitive reverse surge current per diode

at t_p= 2 μs, 1 kHz

1.0

0.5

Peak non-repetitive reverse energy (8/20 μs waveform)

per diode

Electrostatic discharge capacitor voltage human body

model: C = 100 pF, R = 1.5 kΩ

V_C

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

Document Number: 88675

Revision: 15-Jun-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5

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与MBR2535CT_10相关器件

型号	品牌	获取价格	描述	数据表
MBR2535CT_11	TSC	获取价格	20.0 AMPS. Schottky Barrier Rectifiers
MBR2535CT_11	FAIRCHILD	获取价格	25 Ampere Schottky Barrier Rectifiers
MBR2535CT_13	TSC	获取价格	25.0 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency
MBR2535CT_14	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR2535CT-1	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR2535CT-1	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-262AA, PLASTIC
MBR2535CT-1-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon, TO-262AA, GREEN, PLASTIC, TO-
MBR2535CT-1P	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR2535CT-1PBF	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR2535CT-1TRL	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A

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