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MBR20L50CT PDF预览

MBR20L50CT

更新时间: 2024-02-08 09:09:56
品牌 Logo 应用领域
圣诺 - SENO /
页数 文件大小 规格书
2页 237K
描述
20.0A SCHOTTKY BARRIER DIODE

MBR20L50CT 数据手册

 浏览型号MBR20L50CT的Datasheet PDF文件第2页 
Zibo Seno Electronic Engineering Co.,Ltd.  
MBR20L40CT – MBR20L200CT  
20.0A SCHOTTKY BARRIER DIODE  
Features  
!
!
!
!
!
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Schottky Barrier Chip  
Ideally Suited for Automatic Assembly  
Low Power Loss, High Efficiency  
For Use in Low Voltage Application  
Guard Ring Die Construction  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
TO-220AB  
TO-220AB  
Min  
L
Dim  
A
B
C
D
E
Max  
15.90  
10.70  
3.43  
B
M
13.90  
9.60  
C
D
E
2.54  
K
A
5.75  
6.85  
3.56  
4.56  
Mechanical Data  
!
!
1
2
3
G
H
J
12.70  
2.29  
14.73  
2.79  
Case:TO-220AB, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
G
0.51  
1.14  
J
N
K
L
3.53Æ 4.09Æ  
!
!
!
Polarity: See Diagram  
3.56  
1.10  
0.30  
2.03  
4.83  
1.40  
0.64  
2.92  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version  
H
H
P
M
N
P
Pin 1 +  
Pin 2 -  
Pin 3 +  
+
Case  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Units  
Characteristic  
Symbol  
20L40 20L45 20L50 20L60 20L100 20L150 20L200  
CT  
40  
CT  
CT  
50  
CT  
60  
CT  
CT  
150  
CT  
200  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
45  
100  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
28  
31  
35  
42  
20.0  
70  
105  
140  
V
A
Average Rectified Output Current @TL = 75°C  
(Note 1)  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
FSM  
A
I
200  
FM  
0.45  
350  
0.55  
0.70  
0.85  
V
Forward Voltage  
@IF = 20A  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.1  
20  
IRM  
mA  
280  
j
pF  
°C/W  
°C  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 1)  
Operating and Storage Temperature Range  
C
200  
2.0  
RJA  
3.0  
-55 to +150  
Tj, TSTG  
-55 to +175  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
www.senocn.com  
MBR20L40CT-MBR20L200CT  
1 of 2  

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