Datasheet > MBR2060CT-E1

MBR2060CT-E1

更新时间： 2024-01-05 12:46:31

品牌	Logo	应用领域
BCDSEMI		二极管高压局域网高电压电源
页数	文件大小	规格书
11页	910K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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技术参数
数据手册

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MBR2060CT-E1 技术参数

生命周期：	Transferred	零件包装代码：	TO-220AB
包装说明：	ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.31
Is Samacsys：	N	其他特性：	LOW NOISE
应用：	HIGH VOLTAGE POWER	配置：	COMMON CATHODE, 2 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	最大非重复峰值正向电流：	150 A
元件数量：	2	相数：	1
端子数量：	3	最高工作温度：	150 °C
最大输出电流：	10 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大重复峰值反向电压：	60 V
表面贴装：	NO	技术：	SCHOTTKY
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MBR2060CT-E1 数据手册

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MBR2060C

Absolute Maximum Ratings (Each Diode Leg) (Note 1)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

Average Rectified Forward Current

(Rated V_R) T_C=136^oC

I_{F (AV)}

I_FRM

I_FSM

Peak Repetitive Forward Current

(Rated V_R, Square Wave, 20kHz) T_C=131^oC

Non Repetitive Peak Surge Current (Surge Applied at Rated

Load Conditions Half Wave, Single Phase, 60Hz)

150

^oC

Operating Junction Temperature (Note 2)

Storage Temperature Range

T_J

150

^oC

T_STG

dv/dt

-50 to 150

10000

Voltage Rate of Change (Rated V_R)

V/µs

ESD (Machine Model=C)

>400

ESD (Human Body Model=3B)

>8000

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dP_D/dT_J< 1/θ_JA

Thermal Characteristics

Parameter

Symbol

Condition

Value

Unit

TO-220-3/

TO-220-3 (2)

2.5

θ_JC

Junction to Case

TO-220F-3

4.5

^oC/W

Maximum Thermal Resistance

TO-220-3/

TO-220-3 (2)

θ_JA

Junction to Ambient

TO-220F-3

Mar. 2011 Rev. 1. 3

BCD Semiconductor Manufacturing Limited

1 2 345 6 7...11

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