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MBR1660FCT PDF预览

MBR1660FCT

更新时间: 2024-01-03 12:33:05
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强茂 - PANJIT 肖特基二极管瞄准线分离技术隔离技术功效局域网
页数 文件大小 规格书
2页 89K
描述
ISOLATION SCHOTTKY BARRIER RECTIFIERS

MBR1660FCT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.17
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR1660FCT 数据手册

 浏览型号MBR1660FCT的Datasheet PDF文件第2页 
MBR1640FCT~MBR16200FCT  
ISOLATION SCHOTTKY BARRIER RECTIFIERS  
40 to 200 Volts  
VOLTAGE  
CURRENT 16 Amperes  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
• Low forwrd voltge, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: ITO-220AB full molded plastic package  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
.027(.67)  
.022(.57)  
• Mounting Position: Any  
• Weight: 0.055 ounces, 1.5615 grams.  
MAXIMUM RATINGS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR1640FCT  
40  
MBR1645FCT  
45  
MBR1650FCT  
50  
MBR1660FCT  
60  
MBR1680FCT  
80  
MBR1690FCT MBR16100FCT MBR16150FCT MBR16200FCT  
PARAMETER  
SYMBOL  
VR  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
R
M
Maximum RMS Voltage  
VR  
28  
40  
31.5  
45  
35  
50  
42  
60  
56  
V
V
M
S
Maximum DC Blocking Voltage  
Maximum Average Forward (See Figure 1)  
VD  
80  
100  
C
IF  
16  
150  
A
( A V  
)
Peak Forward Surge Current  
: 8.3ms single half sine-wave  
IF  
A
S
M
superimposed on rated load(JEDEC method)  
Maximum Forward Voltage at 8.0A per leg  
VF  
IR  
0.70  
0.75  
0.80  
0.90  
V
Maximum DC Reverse Current at TJ =25O  
C
0.05  
20  
mA  
Rated DC Blocking Voltag TJ =100O  
C
O C  
W
/
Typical Thermal Resistance  
Rθ J C  
2.0  
O C  
-55 to +150  
Operating Junction and Storage Temperature Range  
TJ ,TS  
-65 to +175  
T G  
NOTES : Both Bonding and Chip structure are available.  
STAD-APR.30.2009  
PAGE . 1  

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