Datasheet > MBR1660HE3/45

MBR1660HE3/45

更新时间： 2024-02-06 16:32:56

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	106K
描述
DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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技术参数
数据手册
替代型号

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MBR1660HE3/45 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-220AC
包装说明：	R-PSFM-T2	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.09
Is Samacsys：	N	Base Number Matches：	1

MBR1660HE3/45 数据手册

MBRF16xx, MBRB16xx

Vishay General Semiconductor

www.vishay.com

Schottky Barrier Rectifier

FEATURES

D²PAK (TO-263AB)

ITO-220AC

• Power pack

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C (for D²PAK (TO-263AB) package)

MBRF16xx

MBRB16xx

PIN 1

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for ITO-220AC package)

PIN 1

PIN 2

HEATSINK

PIN 2

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, and polarity protection application.

PRIMARY CHARACTERISTICS

I_F(AV)

16 A

V_RRM

35 V to 60 V

150 A

MECHANICAL DATA

I_FSM

Case: ITO-220AC, D²PAK (TO-263AB)

V_F

0.57 V, 0.65 V

150 °C

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified

(“_X” denotes revision code, e.g. A, B, ...)

T_Jmax.

Package

Diode variations

ITO-220AC, D²PAK (TO-263AB)

Single

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBRB1635

MBRB1645

MBRB1660

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 125 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

Peak repetitive reverse current at t_p= 2.0 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

T_J

1.0

0.5

10 000

V/μs

°C

Operating junction temperature range

Storage temperature range

-65 to +150

-65 to +175

T_STG

Isolation voltage (ITO-220AC only) from terminal to heatsink

t = 1 min

V_AC

1500

Revision: 16-Nov-17

Document Number: 88671

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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MBR1660HE3/45 替代型号

型号	品牌	替代类型	描述	数据表
MBR1660-E3/45	VISHAY	完全替代	DIODE SCHOTTKY 60V 16A TO220AB
MBR1060	ONSEMI	功能相似	SWITCHMODE Power Rectifiers

与MBR1660HE3/45相关器件

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