Datasheet > MBR1030

MBR1030

更新时间： 2024-09-29 12:10:19

品牌	Logo	应用领域
科盛美 - KERSEMI		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	509K
描述
Metal of siliconrectifier, majonty carrier conducton

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数据手册

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MBR1030 数据手册

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MBR1020

THRU

MBR10100

Features

Metal of siliconrectifier, majonty carrier conducton

Guard ring for transient protection

Low power loss high efficiency

High surge capacity, High current capability

10 Amp

Schottky Barrier

Rectifier

20 to 100 Volts

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +175°C

TO-220AC

Microsemi

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

20V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

MBR1020 MBR1020

MBR1030 MBR1030

MBR1035 MBR1035

MBR1040 MBR1040

MBR1045 MBR1045

MBR1060 MBR1060

MBR1080 MBR1080

14V

21V

24.5V

28V

31.5V

42V

20V

30V

35V

40V

45V

60V

80V

30V

35V

40V

45V

60V

80V

100V

56V

MBR10100 MBR10100

70V

100V

PIN 1

PIN 2

Electrical Characteristics @ 25°C Unless Otherwise Specified

CASE

Average Forward

Current

I_F(AV)

10A

T_C= 125°C

Peak Forward Surge

Current

I_FSM

150A

8.3ms, half sine

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

Maximum Forward

Voltage Drop Per

Element

ꢀ ꢀ ꢀ ꢀ

INCHES

ꢃꢂꢄ

ꢁꢂꢃ

ꢃꢅꢆ

ꢃꢂꢄ

14.22

9.65

2.54

5.84

9.65

------

12.70

4.83

0.51

0.30

ꢃꢅꢆ

15.88

10.67

3.43

6.86

10.67

6.35

14.73

5.33

1.14

0.64

ꢄꢇꢈꢉ

.560

.380

.100

.230

.380

------

.500

.190

.020

.012

.139

.140

.045

.080

.625

.420

.135

.270

.420

.250

.580

.210

.045

.025

.161

.190

.055

.115

V_F

.84V

.95V

.84V

I_FM= 20 A mper

T^A=

25°C

I_FM= 10 A mper

MBR1020-1045

MBR1045-1060

MBR1080-10100

Maximum DC

Reverse Current At

Rated DC Blocking

3.53

3.56

1.14

4.09

4.83

1.40

Voltage

C_J

MBR1020-1045

MBR1060-10100

0.1mA T_J= 25°C

0.15mA

2.03

2.92

Typical Junction

Capacitance

Measured at

1.0MHz, V_R=4.0V

400pF

www.kersemi.com

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