RoHS
MBR2535FCT THRU MBR25200FCT
COMPLIANT
肖特基二极管SCHOTTKY Diodes
■特征 Features
■外形尺寸和印记 Outline Dimensions and Mark
●
耐正向浪涌电流能力高
ITO-220AB
High surge forward current capability
● 低功耗,大电流
.201(5.1)
MAX
.150(3.8)
.102(2.6)
DIA
.421(10.7)
MAX
.140(3.56)
MAX
Low Power loss, High efficiency
.128(3.25)
.085(2.15)
.626(15.9)
.567(14.4)
●
Io
25.0A
.177(4.5)
MAX
PIN1
2
3
● VRRM
35-200V
.126(3.2)
.08(2.1)
.071(1.8)
MAX
.035(0.9)
.559(14.2)
.504(12.7)
■用途 Applications
MAX
.116(2.95)
.071(1.80)
.031(0.80)
MAX
.116(2.95)
.071(1.80)
●
快速整流用
PIN1
PIN1
PIN3
High speed switching
CASE
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
MBR-FCT
2535 2545 2560 2580 251002515025200
参数名称
Item
符号 单位
Symbol Unit
条件
Conditions
反向重复峰值电压
Repetitive Peak Reverse Voltage
35
45
60
80
100
150
200
VRRM
V
A
A
正弦半波60Hz,电阻负载,Tc(Fig.1)
60HZ Half-sine wave, Resistance load,
Tc(Fig.1)
平均整流输出电流
Average Rectified Output Current
Io
25
60HZ正弦波,一个周期,Ta=25℃
60HZ sine wave, 1 cycle, Ta=25℃
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward Current
IFSM
200
正向浪涌电流的平方对电流浪涌持
续
1ms≤t<8.3ms T =25℃,单个二极
管
j
I2t
A2s
167
时间的积分值
Current Squared Time
1ms≤t<8.3ms T =25℃,Rating
j
of per diode
贮存温度
Storage Temperature
℃
℃
Tstg
Tj
-55 ~ +150
-55 ~ +150
在正向直流条件下,没有施加反向压
降,通电≤1h(图示1)①
IN DC Forward Mode-Forward
Operations,without reverse bias, t ≤1
h (Fig. 1)①
结温
Junction Temperature
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
最大值
Max
MBR-FCT
参数名称
Item
符号
Symbol
单位
Unit
测试条件
Test Condition
2535 2545 2560 2580 251002515025200
正向峰值电压
Peak Forward Voltage
I FM =12.5A
0.7
0.75
0.85
0.90
0.95
VFM
V
T =25℃
IRRM1
0.1
a
反向峰值电流
Peak Reverse Current
VRM =VRRM
mA
℃/W
IRRM2
T =100℃
a
20
热阻
结和壳之间
Between junction and case
R
θJ-C
2.0
Thermal Resistance
备注
NOTE
■
①Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test.
扬州扬杰电子科技股份有限公司
www.21yangjie.com
S-B092
Rev.1.1, 29-Nov-14
Yangzhou Yangjie Electronic Technology Co., Ltd.