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MBM29LV200BC-70PF PDF预览

MBM29LV200BC-70PF

更新时间: 2024-10-01 19:12:43
品牌 Logo 应用领域
富士通 - FUJITSU 光电二极管内存集成电路
页数 文件大小 规格书
53页 497K
描述
Flash, 128KX16, 70ns, PDSO44, PLASTIC, SO-44

MBM29LV200BC-70PF 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:PLASTIC, SO-44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最长访问时间:70 ns
其他特性:CONFIGURABLE AS 128K X 16备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.45 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,3
端子数量:44字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP44,.63
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:2.5 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.035 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:13 mmBase Number Matches:1

MBM29LV200BC-70PF 数据手册

 浏览型号MBM29LV200BC-70PF的Datasheet PDF文件第2页浏览型号MBM29LV200BC-70PF的Datasheet PDF文件第3页浏览型号MBM29LV200BC-70PF的Datasheet PDF文件第4页浏览型号MBM29LV200BC-70PF的Datasheet PDF文件第5页浏览型号MBM29LV200BC-70PF的Datasheet PDF文件第6页浏览型号MBM29LV200BC-70PF的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20865-4E  
FLASH MEMORY  
CMOS  
2M (256K × 8/128K × 16) BIT  
MBM29LV200TC-70/-90/MBM29LV200BC-70/-90  
GENERAL DESCRIPTION  
The MBM29LV200TC/BC are a 8M-bit, 3.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K  
words of 16 bits each. The MBM29LV200TC/BC are offered in 48-pin TSOP(1) and 44-pin SOP packages. These  
devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and  
5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard  
EPROM programmers.  
The standard MBM29LV200TC/BC offer access times 70 ns and 120 ns, allowing operation of high-speed micro-  
processors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write  
enable (WE), and output enable (OE) controls.  
(Continued)  
PRODUCT LINE UP  
Part No.  
MBM29LV200TC/MBM29LV200BC  
+0.3 V  
–0.3 V  
VCC = 3.3 V  
VCC = 3.0 V  
70  
Ordering Part No.  
+0.6 V  
–0.3 V  
90  
Max Address Access Time (ns)  
Max CE Access Time (ns)  
Max OE Access Time (ns)  
70  
70  
30  
90  
90  
35  
PACKAGES  
48-pin plastic TSOP(1)  
48-pin plasticTSOP(1)  
44-pin plastic SOP  
Marking Side  
Marking Side  
Marking Side  
(FPT-48P-M20)  
(FPT-48P-M19)  
(FPT-44P-M16)  

与MBM29LV200BC-70PF相关器件

型号 品牌 获取价格 描述 数据表
MBM29LV200BC-70PF-E1 SPANSION

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Flash, 128KX16, 70ns, PDSO44, PLASTIC, SOP-44
MBM29LV200BC-70PFTN FUJITSU

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2M (256K X 8/128K X 16) BIT
MBM29LV200BC-70PFTN SPANSION

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Flash, 128KX16, 70ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV200BC-70PFTN-E1 SPANSION

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Flash, 128KX16, 70ns, PDSO48, PLASTIC, TSOP1-48
MBM29LV200BC-70PFTR SPANSION

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Flash, 128KX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29LV200BC-70PFTR FUJITSU

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2M (256K X 8/128K X 16) BIT
MBM29LV200BC-90 FUJITSU

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2M (256K X 8/128K X 16) BIT
MBM29LV200BC-90PF FUJITSU

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暂无描述
MBM29LV200BC-90PF SPANSION

获取价格

Flash, 128KX16, 90ns, PDSO44, PLASTIC, SOP-44
MBM29LV200BC-90PFTN FUJITSU

获取价格

2M (256K X 8/128K X 16) BIT