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MAX2601ESA PDF预览

MAX2601ESA

更新时间: 2024-01-10 14:27:39
品牌 Logo 应用领域
美信 - MAXIM 晶体射频双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 51K
描述
3.6V, 1W RF Power Transistors for 900MHz Applications

MAX2601ESA 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOT
包装说明:PSOP-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.05
最大集电极电流 (IC):1.2 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):100
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G8
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MAX2601ESA 数据手册

 浏览型号MAX2601ESA的Datasheet PDF文件第1页浏览型号MAX2601ESA的Datasheet PDF文件第2页浏览型号MAX2601ESA的Datasheet PDF文件第3页浏览型号MAX2601ESA的Datasheet PDF文件第5页浏览型号MAX2601ESA的Datasheet PDF文件第6页 
3 .6 V, 1 W RF P o w e r Tra n s is t o rs  
fo r 9 0 0 MHz Ap p lic a t io n s  
V
CC  
V
BB  
5  
1000pF  
0.1µF  
L1  
0.1µF  
1000pF  
24Ω  
100nH  
1000pF  
1
8
4
5
T2  
1000pF  
RF  
IN  
10pF  
2pF  
T1  
2, 6, 7  
BACKSIDE  
SLUG  
2pF  
12pF  
L1 = COILCRAFT A05T INDUCTOR, 18.5nH  
T1, T2 = 1", 50TRANSMISSION LINE ON FR-4  
1/MAX602  
Figure 1. Test Circuit  
_______________De t a ile d De s c rip t io n  
MAX2 6 0 1 /MAX2 6 0 2  
The MAX2601/MAX2602 are high-performance silicon  
bipolar transistors in power-enhanced, 8-pin SO pack-  
ages. The base and collector connections use two pins  
each to reduce series inductance. The emitter con-  
nects to three (MAX2602) or four (MAX2601) pins in  
addition to a back-side heat slug, which solders direct-  
ly to the PC board ground to reduce emitter inductance  
and improve thermal dissipation. The transistors are  
intended to be used in the common-emitter configura-  
tion for ma ximum p owe r g a in a nd p owe r-a d d e d  
efficiency.  
V
CC  
V
CC  
R
BIAS  
RF  
C
RF  
OUT  
C
OUT  
RF  
C
Q1  
Q2  
C
BIAS  
Cu rre n t Mirro r Bia s  
(MAX2 6 0 2 o n ly)  
C
IN  
The MAX2602 inc lud e s a hig h-p e rforma nc e s ilic on  
bipolar RF power transistor and a thermally matched  
biasing diode that matches the power transistors ther-  
mal and process characteristics. This diode is used to  
c re a te a b ia s ne twork tha t a c c ura te ly c ontrols the  
power transistors collector current as the temperature  
changes (Figure 2).  
RF  
IN  
Figure 2. Bias Diode Application  
temperature variations. Simply tying the biasing diode  
to the supply through a resistor is adequate in most sit-  
uations. If large supply variations are anticipated, con-  
nect the biasing diode to a reference voltage through a  
resistor, or use a stable current source. Connect the  
biasing diode to the base of the RF power transistor  
through a large RF impedance, such as an RF choke  
(inductor), and decouple to ground through a surface-  
mount chip capacitor larger than 1000pF.  
The biasing diode is a scaled version of the power tran-  
sistors base-emitter junction, in such a way that the  
current through the biasing diode is 1/15 the quiescent  
collector current of the RF power transistor. Supplying  
the biasing diode with a constant current source and  
connecting the diodes anode to the RF power transis-  
tors base ensures that the RF power transistors quies-  
c e nt c olle c tor c urre nt re ma ins c ons ta nt throug h  
4
_______________________________________________________________________________________  

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