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MAX2118UTL

更新时间： 2024-02-23 11:43:00
品牌 Logo 应用领域
美信 - MAXIM /
页数 文件大小 规格书
15页 315K
描述
Complete DBS Direct-Conversion Tuner ICs with Monolithic VCOs

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MAX2118UTL 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：6 X 6 MM, LEAD FREE, QFN-40
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.78
特性阻抗：30 Ω构造：COMPONENT
JESD-609代码：e3LO 可调谐：YES
安装特点：SURFACE MOUNT端子数量：40
最高工作温度：85 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装等效代码：LCC40,.24SQ,20
电源：5 V最大射频输入频率：2175 MHz
最小射频输入频率：925 MHz射频/微波设备类型：DOWN CONVERTER
子类别：RF/Microwave Up/Down Converters最大压摆率：265 mA
表面贴装：YES端子面层：Matte Tin (Sn)

MAX2118UTL 数据手册

 浏览型号MAX2118UTL的Datasheet PDF文件第1页浏览型号MAX2118UTL的Datasheet PDF文件第3页浏览型号MAX2118UTL的Datasheet PDF文件第4页浏览型号MAX2118UTL的Datasheet PDF文件第5页浏览型号MAX2118UTL的Datasheet PDF文件第6页浏览型号MAX2118UTL的Datasheet PDF文件第7页 
Complete DBS Direct-Conversion Tuner ICs  
with Monolithic VCOs  
ABSOLUTE MAXIMUM RATINGS  
V
to GND...........................................................-0.3V to +5.5V  
Continuous Power Dissipation (T = +85°C)  
A
CC  
All Other Pins to GND.................................-0.3V to (V + 0.3V)  
RFIN+ to RFIN-, XTL+ to XTL-, IDC+ to IDC-,  
QDC+ to QDC- ................................................................... 2.0V  
CNTOUT, XTALOUT, CPOUT, VREG1/2,  
I/QOUT to GND Short-Circuit Duration.................................10s  
40-Pin Thin QFN (derate 23.3mW/°C above +85°C) .... 1.86W  
Operating Temperature Range ..............................0°C to +85°C  
Junction Temperature .....................................................+150°C  
Storage Temperature Range ............................-65°C to +160°C  
Soldering Temperature (10s) ..........................................+300°C  
CC  
Continuous Current (any pin other than V  
or GND) .......10mA  
CC  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional  
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability.  
DC ELECTRICAL CHARACTERISTICS  
(V  
= +4.75V to +5.25V, GND = 0V, GC1 = +0.75V; no AC signal applied, default register settings, T = 0°C to +85°C, unless other-  
A
CC  
wise noted. Typical values are at V = +5V, T = +25°C, unless otherwise noted.) (Note 1)  
CC  
A
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
SUPPLY  
Supply Voltage  
Supply Current  
4.75  
5.25  
265  
V
LO locked at 2175MHz  
195  
mA  
ANALOG GAIN CONTROL INPUT—GC1  
Usable Voltage Range  
0.75  
-50  
2.6  
V
Input Current  
0.75V < GC1 < 2.6V (Note 2)  
+50  
µA  
BASEBAND OUTPUTS— IOUT, QOUT (MAX2116)  
Nominal Output Voltage Swing  
Output Clipping Voltage  
DC Output Voltage  
R
= 1kΩ // 10pF (Note 3)  
0.8  
2
V
V
LOAD  
P-P  
P-P  
V
1.2  
BASEBAND OUTPUTS— IOUT , QOUT (MAX2118)  
Bit DL = high  
Bit DL = low  
1
0.59  
2
R
= 2kΩ // 10pF  
LOAD  
Nominal Output Voltage Swing  
V
V
P-P  
(differential) (Note 3)  
Output Clipping Voltage  
Common-Mode Voltage  
DC Offset Voltage  
P-P  
V
0.65  
-50  
0.75  
0
0.85  
+50  
mV  
ANALOG OUTPUT— VREG1, VREG2  
Output Voltage  
2.7  
2.85  
3.05  
3
V
Source Current  
Each output  
mA  
STATIC CONTROL INPUTS—AS2, AS1, AS0  
Input Voltage High  
4
V
V
Input Voltage Low  
0.5  
Input Current  
-50  
+50  
µA  
SYNTHESIZER DC PARAMETERS  
Bits CP1 = 0, CP0 = 0  
Bits CP1 = 0, CP0 = 1  
Bits CP1 = 1, CP0 = 0  
Bits CP1 = 1, CP0 = 1  
35  
70  
50  
68  
100  
200  
400  
136  
272  
544  
Charge Pump Source/Sink Current  
µA  
140  
280  
2
_______________________________________________________________________________________  
1234567...15

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