Datasheet > MASMLG58CATRE3

MASMLG58CATRE3

更新时间： 2024-11-02 19:01:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
4页	189K
描述
Trans Voltage Suppressor Diode, 3000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MASMLG58CATRE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-215AB
包装说明：	R-PDSO-G2	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.51
最大击穿电压：	71.2 V	最小击穿电压：	64.4 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-215AB
JESD-30 代码：	R-PDSO-G2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	3000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	BIDIRECTIONAL
最大功率耗散：	1.61 W	认证状态：	Not Qualified
最大重复峰值反向电压：	58 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

MASMLG58CATRE3 数据手册

SMLJ5.0 thru SMLJ170CA, e3

and SMLG5.0 thru SMLG170CA, e3

SURFACE MOUNT 3000 Watt

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The SMLJ5.0-170A or SMLG5.0-170A series of 3000 W Transient Voltage

Suppressors (TVSs) protects a variety of voltage-sensitive components

from destruction or degradation. It is available in J-bend design (SMLJ)

with the DO-214AB package for greater PC board mounting density or in a

Gull-wing design (SMLG) in the DO-215AB for visible solder connections.

Selections include unidirectional and bidirectional. They can protect from

secondary lightning effects per IEC61000-4-5 and class levels defined

herein, or for inductive switching environments and induced RF protection.

Since their response time is virtually instantaneous, they can also be used

in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical surface mount TVS design in both J-bend

or Gull-wing terminations with fast response

•

Suppresses transients up to 3000 watts @ 10/1000 µs

Protection from switching transients and induced RF

Available in both Unidirectional and Bidirectional

construction with a C or CA suffix

Protection from ESD, and EFT per IEC 61000-4-2 and

IEC 61000-4-4

•

Selections for 5.0 to 170 volts standoff voltages (V_WM)

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1 & 2: SML 5.0 to SML 170A or CA

Class 3: SML 5.0 to SML 150A or CA

Class 4: SML 5.0 to SML 75A or CA

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC (10X)

as well as surge (3X) and 24 hours HTRB with post

test V_Z& I_R(in the operating direction for unidirectional

or both directions for bidirectional)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1: SML 5.0 to SML 170A or CA

Class 2: SML 5.0 to SML 90A or CA

Class 3: SML 5.0 to SML 48A or CA

Class 4: SML 5.0 to SML 24A or CA

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers

Axial-lead packages for thru-hole mounting available

as 5KP5.0–110A with 5000 W rating (consult factory

for other surface mount options)

•

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

•

RoHS Compliant devices available by adding e3 suffix

Class 2: SML 5.0 to SML 43A or CA

Class 3: SML 5.0 to SML 22A or CA

Class 4: SML 5.0 to SML10A or CA

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

MAXIMUM RATINGS

• Peak Pulse Power dissipation at 25^ºC: 3000 watts at

10/1000 μs (also see Fig 1,2, and 3)

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.01%

•

TERMINALS: Gull-wing or C-bend (modified J-bend)

leads with tin-lead or RoHS Compliant annealed

matte-Tin plating solderable per MIL-STD-750,

method 2026

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^ºC to +150^ºC

•

POLARITY: Cathode indicated by band. No marking

on bidirectional devices

• Thermal resistance: 17.5^ºC/W junction to lead, or

77.5^ºC/W junction to ambient when mounted on FR4

PC board (1 oz Cu) with recommended footprint

Steady-State Power dissipation: 6 watts at T_L= 45^oC,

or 1.61 watts at T_A= 25^ºC when mounted on FR4 PC

board with recommended footprint

MARKING: Part number without SM and G or J prefix

(e.g. L5.0, L5.0A, L5.0Ae3, L5.0CA, L36, L36A,

L36Ae3, L36CAe3, etc.)

•

TAPE & REEL option: Standard per EIA-481-2 with

16 mm tape, 750 per 7 inch reel or 2500 per 13 inch

reel (add “TR” suffix to part number)

• Forward Surge at 25ºC: 200 Amps peak impulse of

8.3 ms half-sine wave (unidirectional only)

• Solder temperatures: 260 ^ºC for 10 s (maximum)

WEIGHT: 0.25 grams

4-06-2009 REV J

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MASMLG58CATRE3相关器件

型号	品牌	获取价格	描述	数据表
MASMLG6.0A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MASMLG6.0A/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MASMLG6.0AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MASMLG6.0AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MASMLG6.0AE3TR	MICROSEMI	获取价格	3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMLG, 2 PIN
MASMLG6.0ATR	MICROSEMI	获取价格	3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC PACKAGE-2
MASMLG6.0CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MASMLG6.0CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MASMLG6.0CAE3TR	MICROSEMI	获取价格	3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMLG, 2 PIN
MASMLG6.0CATR	MICROSEMI	获取价格	3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC PACKAGE-2

与MASMLG58CATRE3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

7
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

4
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

26
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

25

产品中心

服务支持

精选活动

关于我们

帮助中心

MASMLG58CATRE3

MASMLG58CATRE3 技术参数

MASMLG58CATRE3 数据手册

与MASMLG58CATRE3相关器件

与MASMLG58CATRE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MASMLG58CATRE3

MASMLG58CATRE3 技术参数

MASMLG58CATRE3 数据手册

与MASMLG58CATRE3相关器件

与MASMLG58CATRE3相关文章

您还可以找

您在本页遇到什么问题？