MA9264
MA9264
Radiation Hard 8192x8 Bit Static RAM
Replaces June 1999 version, DS3692-6.0
DS3692-7.0 January 2000
The MA9264 64k Static RAM is configured as 8192x8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
1.5µm technology.
Thedesignusesa6transistorcellandhasfullstaticoperationwith
noclockortimingstroberequired.Addressinputbuffersaredeselected
when chip select is in the HIGH state.
FEATURES
■ 1.5µm CMOS-SOS Technology
■ Latch-up Free
■ Fast Access Time 70ns Typical
■ Total Dose 106 Rad(Si)
■ Transient Upset >1011 Rad(Si)/sec
■ SEU 4.3 x 10-11 Errors/bitday
■ Single 5V Supply
See Application Note “Overview of the Dynex Semiconductor
Radiation Hard 1.5µm CMOS/SOS SRAM Range”.
Operation Mode CS CE OE WE
I/O
Power
■ Three State Output
Read
Write
L
L
L
H
H
H
L
X
H
H
L
D OUT
D IN
■ Low Standby Current 100µA Typical
■ -55°C to +125°C Operation
ISB1
ISB2
■ All Inputs and Outputs Fully TTL or CMOS
Output Disable
H
High Z
Compatible
Standby
H
X
X
L
X
X
X
X
High Z
X
■ Fully Static Operation
Figure 1: Truth Table
A
D
D
R
E
S
S
A12
R
O
W
A9
A8
D
E
C
O
D
E
R
A4
A3
B
U
F
F
E
R
A6
A5
A7
CS
CE
WE
OE
A10 A0 A1 A2 A11
Figure 2: Block Diagram
1/15