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by MAC229AFP/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
•
•
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
•
•
Center Gate Geometry for Uniform Current Spreading
Gate Triggering Guaranteed in Three Modes (MAC229FP Series) or Four Modes
(MAC229AFP Series)
MT2
MT1
G
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage
(T = –40 to 110°C,
J
V
DRM
Volts
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC229-4FP, MAC229A4FP
200
400
600
800
MAC229-6FP, MAC229A6FP
MAC229-8FP, MAC229A8FP
MAC229-10FP, MAC229A10FP
On-State RMS Current (T = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
I
8
Amps
Amps
C
T(RMS)
Peak Non-repetitive Surge Current
I
80
26
TSM
(One Full Cycle 60 Hz, T = 110°C)
J
2
I t
2
A s
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t
Peak Gate Voltage (t
Peak Gate Power (t
Average Gate Power
2 µs)
2 µs)
2 µs)
I
±2
±10
20
Amps
Volts
GM
V
GM
GM
P
Watts
Watts
P
0.5
G(AV)
(T = 80°C, t
8.3 ms)
C
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
T
–40 to 110
–40 to 150
8
°C
°C
J
T
stg
in. lb.
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. The casetemperature referencepoint for allTC measurements is a point onthe center lead of the packageas closeas possibleto theplastic
body.
1
Motorola Thyristor Device Data
Motorola, Inc. 1995