Datasheet > 存储 > EEPROM> M95512-WMN3P/K

M95512-WMN3P/K

更新时间： 2024-01-13 20:50:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
48页	479K
描述
512 Kbit serial SPI bus EEPROM with high-speed clock

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技术参数
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M95512-WMN3P/K 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.57
Is Samacsys：	N	最大时钟频率 (fCLK)：	10 MHz
数据保留时间-最小值：	40	耐久性：	1000000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G8	长度：	4.9 mm
内存密度：	524288 bit	内存集成电路类型：	EEPROM
内存宽度：	8	功能数量：	1
端子数量：	8	字数：	65536 words
字数代码：	64000	工作模式：	SYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-40 °C
组织：	64KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	SERIAL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	3/5 V	认证状态：	Not Qualified
座面最大高度：	1.75 mm	串行总线类型：	SPI
最大待机电流：	0.000005 A	子类别：	EEPROMs
最大压摆率：	0.008 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	2.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	AUTOMOTIVE	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	3.9 mm
最长写入周期时间 (tWC)：	5 ms	写保护：	HARDWARE/SOFTWARE
Base Number Matches：	1

M95512-WMN3P/K 数据手册

M95512-W, M95512-R

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