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M95080-RMN6TP/K PDF预览

M95080-RMN6TP/K

更新时间: 2024-11-19 16:52:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
44页 682K
描述
SPI BUS SERIAL EEPROM

M95080-RMN6TP/K 技术参数

生命周期:Obsolete包装说明:SOP,
Reach Compliance Code:unknown风险等级:5.66
最大时钟频率 (fCLK):5 MHzJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:8192 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL座面最大高度:1.75 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

M95080-RMN6TP/K 数据手册

 浏览型号M95080-RMN6TP/K的Datasheet PDF文件第2页浏览型号M95080-RMN6TP/K的Datasheet PDF文件第3页浏览型号M95080-RMN6TP/K的Datasheet PDF文件第4页浏览型号M95080-RMN6TP/K的Datasheet PDF文件第5页浏览型号M95080-RMN6TP/K的Datasheet PDF文件第6页浏览型号M95080-RMN6TP/K的Datasheet PDF文件第7页 
M95080-W M95080-R M95080-DF  
8-Kbit serial SPI bus EEPROM with high-speed clock  
Datasheet - production data  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
– 8 Kb (1 Kbyte) of EEPROM  
SO8 (MN)  
150 mil width  
– Page size: 32 bytes  
– Additional Write lockable Page  
(Identification page)  
Write  
– Byte Write within 5 ms  
– Page Write within 5 ms  
Write Protect: quarter, half or whole memory  
TSSOP8 (DW)  
169 mil width  
array  
High-speed clock: 20 MHz  
Single supply voltage:  
– 2.5 V to 5.5 V for M95080-W  
– 1.8 V to 5.5 V for M95080-R  
– 1.7 V to 5.5 V for M95080-DF  
UFDFPN8 (MC)  
Operating temperature range: from -40°C up to  
2 x 3 mm  
+85°C  
Enhanced ESD protection  
More than 4 million Write cycles  
More than 200-year data retention  
Packages  
– RoHS compliant and halogen-free  
®
(ECOPACK )  
March 2014  
DocID022540 Rev 3  
1/44  
This is information on a product in full production.  
www.st.com  
 

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