M63850FP

更新时间： 2024-02-16 11:05:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		二极管
页数	文件大小	规格书
5页	52K
描述
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

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技术参数
数据手册

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M63850FP 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F16
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	Is Samacsys：	N
配置：	COMPLEX	最大漏极电流 (ID)：	1.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F16
元件数量：	3	端子数量：	16
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL AND P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管元件材料：	SILICON
Base Number Matches：	1

M63850FP 数据手册

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63850P/FP

4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

DESCRIPTION

PIN CONFIGURATION

The M63850P/FP is a inverter input power DMOS transistor

array that consists of 4 independent output N-channel

DMOS transistors.

COM 1

16 →O4

15 ←IN4

O1←

IN1→ 3

VDD

GND

IN2→ 6

11 ←IN3

10 →O3

FEATURES

ꢀ 4 circuits of N-channels DMOS

ꢀ High breakdown voltage (V^DS≥ 80V)

ꢀ High-current driving (I^DS(max) = 1.5A)

ꢀ With clamping diodes

O2← 8

COM

NC : No connection

Package type 16P4(P)

16P2N(FP)

ꢀ Drain-source on-state low resistance

(R^ON= 0.72Ω, @ = 1.25A)

ꢀ Wide operating temperature range (Ta = –40 to +85°C)

CIRCUIT DIAGRAM

COM

OUTPUT

APPLICATION

30k

Drives of relays and printers, digit drives of indication ele-

ments (LEDs and lamps)

INPUT

4.2k

GND

The four circuits share the COM and GND.

FUNCTION

The diode, indicated with the dotted line, is parasitic, and

cannot be used.

The M63850P/FP is consists of 4 independent N-channel

DMOS transistors. Each DMOS transistor is connected in a

common-source with GND PIN. The clamp diodes for spike

killers are connected between the output pin and the COM

pin of each DMOS transistor. The maximum of Drain current

is 1.5A. The maximum Drain-Source voltage is 80V.

Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol

VDD

VDS

IDS

Parameter

Conditions

Ratings

Unit

Supply voltage

–0.5 ~ +80

1.5

Drain-source voltage

Drain current

Output, H

Current per circuit output, L

–0.5 ~ VDD

Input voltage

Clamping diode reverse voltage

Clamping diode forward current

Power dissipation

1.5

1.47(P)/1.00(FP)

–40 ~ +85

–55 ~ +125

°C

Ta = 25°C, when mounted on board

Topr

Tstg

Operating temperature

Storage temperature

Apr. 2005

12 3 4 5

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