Datasheet > M4N37

M4N37

更新时间： 2024-02-29 07:01:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
8页	143K
描述
6-Pin DIP Optoisolators Transistor Output

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技术参数
数据手册

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M4N37 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	PLASTIC, DIP-6	Reach Compliance Code：	unknown
HTS代码：	8541.40.80.00	风险等级：	5.92
Coll-Emtr Bkdn Voltage-Min：	30 V	配置：	SINGLE
当前传输比率-最小值：	100%	标称电流传输比：	300%
最大暗电源：	50 nA	最大正向电流：	0.06 A
最大正向电压：	1.5 V	最大绝缘电压：	7500 V
JESD-609代码：	e0	安装特点：	THROUGH HOLE MOUNT
元件数量：	1	最大通态电流：	0.05 A
最高工作温度：	100 °C	最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	子类别：	Optocoupler - Transistor Outputs
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)

M4N37 数据手册

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by M4N37/D

SEMICONDUCTOR TECHNICAL DATA

STYLE 1 PLASTIC

The M4N37 device consists of a gallium arsenide infrared emitting diode

optically coupled to a monolithic silicon phototransistor detector.

•

Current Transfer Ratio — 100% Minimum @ Specified Conditions

Guaranteed Switching Speeds

Meets or Exceeds All JEDEC Registered Specifications

Applications

STANDARD THRU HOLE

SCHEMATIC

•

General Purpose Switching Circuits

Interfacing and coupling systems of different potentials and impedances

Regulation Feedback Circuits

Monitor & Detection Circuits

Solid State Relays

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

INPUT LED

PIN 1. LED ANODE

2. LED CATHODE

3. N.C.

Reverse Voltage

Volts

Forward Current — Continuous

4. EMITTER

LED Power Dissipation @ T = 25°C

with Negligible Power in Output Detector

100

5. COLLECTOR

6. BASE

Derate above 25°C

1.41

mW/°C

OUTPUT TRANSISTOR

Collector–Emitter Voltage

Emitter–Base Voltage

Volts

CEO

EBO

CBO

Collector–Base Voltage

Collector Current — Continuous

150

Detector Power Dissipation @ T = 25°C

with Negligible Power in Input LED

Derate above 25°C

1.76

mW/°C

TOTAL DEVICE

(1)

Isolation Source Voltage

(Peak ac Voltage, 60 Hz, 1 sec Duration)

ISO

7500

Vac(pk)

Total Device Power Dissipation @ T = 25°C

Derate above 25°C

250

2.94

mW/°C

(2)

Ambient Operating Temperature Range

–55 to +100

–55 to +150

260

°C

(2)

Storage Temperature Range

stg

Soldering Temperature (10 sec, 1/16″ from case)

1. Isolation surge voltage is an internal device dielectric breakdown rating.

1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Motorola Optoelectronics Device Data

Motorola, Inc. 1997

12 3 4 5 6 7 8

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