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M470T6464QH3-LE6 PDF预览

M470T6464QH3-LE6

更新时间: 2023-01-02 17:20:08
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
19页 346K
描述
DDR DRAM Module, 64MX64, 0.45ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200

M470T6464QH3-LE6 数据手册

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SODIMM  
DDR2 SDRAM  
DDR2 Unbuffered SODIMM  
200pin Unbuffered SODIMM based on 1Gb Q-die  
64-bit Non-ECC  
60FBGA & 84FBGA with Lead-Free and Halogen-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE  
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-  
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-  
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT  
GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.1 July 2008  
1 of 19  

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