Datasheet > M39432NC

M39432NC

更新时间： 2024-10-04 23:15:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
29页	169K
描述
Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM

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M39432NC 数据手册

M39432

Single Chip 4 Mbit Flash Memory and

256 Kbit Parallel EEPROM

■ Multiple Memories on a Single Chip:

– 4 Mbit Flash Memory (organised as 8 sectors)

– 256 Kbit EEPROM

– 64 Byte One Time Programmable Memory

■ CONCURRENT Mode (Read Flash while

writing to EEPROM)

■ WRITE, PROGRAM and ERASE Status Bits

■ 2.7V to 3.6V Single Supply Voltage for

PROGRAM, ERASE and READ Operations

■ 100 ns Access Time (Flash and EEPROM

blocks)

■ Low Power Consumption

TSOP40 (NC)

10 x 20 mm

– 60 µA Stand-by mode (maximum)

– Deep Power Down mode:

6 µA (maximum), 200 nA (typical)

■ Standard Flash Memory Package

■ 100,000 Erase/Write Cycles (minimum)

■ 10 Year Data Retention (minimum)

DESCRIPTION

Figure 1. Logic Diagram

The M39432 is a single supply voltage memory

device combining Flash memory and EEPROM on

a single chip. The memory is mapped in two

Table 1. Signal Names

A0-A18

Address Inputs

Data Inputs / Outputs

EEPROM Block Enable

Flash Block Enable

Output Enable

A0-A18

DQ0-DQ7

M39432

R/B

Write Enable

R/B

Ready/Busy Output

Supply Voltage

Ground

AI01946

November 1999

1/28

12 3 4 5 6 7...29

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