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M27W801-100N6 PDF预览

M27W801-100N6

更新时间: 2024-02-17 08:21:14
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 110K
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M27W801-100N6 数据手册

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M27W801  
8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM  
2.7V to 3.6V SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME:  
– 80ns at V = 3.0V to 3.6V  
32  
CC  
32  
– 100ns at V = 2.7V to 3.6V  
CC  
1
1
PIN COMPATIBLE with M27C801  
LOW POWER CONSUMPTION:  
– 15µA max Standby Current  
FDIP32W (F)  
PDIP32 (B)  
– 15mA max Active Current at 5MHz  
PROGRAMMING TIME 50µs/byte  
HIGH RELIABILITY CMOS TECHNOLOGY  
– 2,000V ESD Protection  
TSOP32 (N)  
8 x 20 mm  
PLCC32 (K)  
– 200mA Latchup Protection Immunity  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
Figure 1. Logic Diagram  
– Device Code: 42h  
DESCRIPTION  
V
CC  
The M27W801 is a low voltage 8 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage and is organized as 1,048,576 by  
8 bits.  
20  
8
A0-A19  
Q0-Q7  
The M27W801 operates in the read mode with a  
supply voltage as low as 2.7V at –40 to 85°C tem-  
perature range. The decrease in operating power  
allows either a reduction of the size of the battery  
or an increase in the time between battery re-  
charges.  
E
M27W801  
GV  
PP  
The FDIP32W (window ceramic frit-seal package)  
has a transparent lids which allow the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
V
SS  
AI02363  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27W801 is offered in PDIP32, PLCC32 and  
TSOP32 (8 x 20 mm) packages.  
April 2000  
1/16  

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