Datasheet > M27C405

M27C405

更新时间： 2022-12-29 00:29:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	101K
描述
4 Mbit 512Kb x 8 OTP EPROM

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M27C405 数据手册

M27C405

Table 9. ProgrammingMode DC Characteristics ⁽¹⁾

(T_A= 25 °C; V_CC= 6.25V ± 0.25V;V_PP= 12.75V ± 0.25V)

Symbol

I_LI

Parameter

Input Leakage Current

Supply Current

Test Condition

Min

Max

Unit

≤

I_CC

I_PP

Program Current

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage TTL

A9 Voltage

E = V_IL

0.8

V_IL

–0.3

V_IH

V_CC+ 0.5

0.4

V_OL

V_OH

V_ID

I_OL= 2.1mA

I_OH= –400 A

2.4

11.5

12.5

Max

105

Note: 1. V_CCmust be applied simultaneously with or before V_PPand removed simultaneously or after V_PP

Table 10. ProgrammingMode AC Characteristics⁽¹⁾

(T_A= 25 °C; V_CC= 6.25V ± 0.25V;V_PP= 12.75V ± 0.25V)

Symbol

t_AVEL

Alt

t_AS

Parameter

Test Condition

Min

Unit

Address Valid to Chip Enable Low

Input Valid to Chip Enable Low

V_PPHigh to Chip Enable Low

V_CCHigh to Chip Enable Low

t_QVEL

t_DS

t_VPHEL

t_VCHEL

t_VPS

t_VCS

t_PW

Chip Enable Program Pulse

Width

t_ELEH

t_EHQX

t_QXGL

t_GLQV

t_GHQZ

t_GHAX

Chip Enable High to Input

Transition

t_DH

Input Transition to Output Enable

Low

t_OES

Output Enable Low to Output

Valid

t_OE

100

130

Output Enable High to Output

Hi-Z

t_DFP

Output Enable High to Address

Transition

t_AH

Notes: 1. V_CCmust be applied simultaneously with or before V_PPand removed simultaneously or after V_PP

2. Sampled only, not 100% tested.

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