Datasheet > M27C405

M27C405

更新时间： 2022-12-29 00:29:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	101K
描述
4 Mbit 512Kb x 8 OTP EPROM

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M27C405 数据手册

M27C405

Table 7. Read Mode DC Characteristics⁽¹⁾

(T_A= 0 to 70 °C or –40 to 85 °C; V_CC= 5V ± 10%;V_PP= V_CC

)

Symbol

I_LI

Parameter

Input Leakage Current

Output Leakage Current

Test Condition

Min

Max

Unit

0V ≤ V_IN≤ V_CC

±10

µA

I_LO

OUT

≤

E = V_IL, G = V_IL,

I_OUT= 0mA, f = 5MHz

I_CC

Supply Current

I_CC1

I_CC2

I_PP

Supply Current (Standby) TTL

Supply Current (Standby) CMOS

Program Current

E = V_IH

E > V_CC– 0.2V

V_PP= V_CC

100

µA

V_IL

Input Low Voltage

–0.3

0.8

(2)

V_IH

Input High Voltage

V_CC+ 1

0.4

V_OL

V_OH

Output Low Voltage

I_OL= 2.1mA

Output High Voltage TTL

Output High Voltage CMOS

I_OH= –400 A

2.4

I_OH= –100 A

V_CC– 0.7V

Notes: 1. V_CCmust be applied simultaneously with or before V_PPand removed simultaneously or after V_PP.

2. Maximum DC voltage on Output is V_CC+0.5V.

Table 8A. Read Mode AC Characteristics ⁽¹⁾

(T_A= 0 to 70 °C or –40 to 85 °C; V_CC= 5V ± 10%;V_PP= V_CC

)

M27C405

-80

Symbol

Alt

Parameter

Test Condition

Unit

-70 ⁽³⁾

-90

Min

Max

Min

Max

Min

Max

Address Validto

Output Valid

t_AVQV

t_ELQV

t_GLQV

t_ACC

t_CE

t_OE

t_DF

E = V_IL, G = V_IL

G = V_IL

Chip Enable Low to

Output Valid

Output Enable Low

to Output Valid

E = V_IL

Chip Enable High to

Output Hi-Z

(2)

t_EHQZ

G = V_IL

Output Enable High

to Output Hi-Z

(2)

t_GHQZ

t_DF

E = V_IL

Address Transition to

Output Transition

t_AXQX

t_OH

E = V_IL, G = V_IL

Notes: 1. V_CCmust be applied simultaneously with or before V_PPand removed simultaneously or after V_PP.

2. Sampled only, not 100% tested.

3. In case of 70ns speed see High Speed AC Measurement conditions.

5/15

1 2 3 456 7 8...15

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