Datasheet > LTC7891

LTC7891

更新时间： 2023-12-20 18:45:06

品牌	Logo	应用领域
亚德诺 - ADI		控制器
页数	文件大小	规格书
36页	1749K
描述
用于GaN FET的100 V，低IQ同步降压控制器

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LTC7891 数据手册

Data Sheet

LTC7891

100 V, Low I_Q, Synchronous Step-Down Controller for GaN FETs

FEATURES

TYPICAL APPLICATION CIRCUIT

► GaN drive technology fully optimized for GaN FETs

► Wide V_INrange: 4 V to 100 V

► Wide output voltage range: 0.8 V ≤ V_OUT≤ 60 V

► No catch, clamp, or bootstrap diodes needed

► Internal smart bootstrap switches prevent overcharging of high-

side driver supplies

► Internally optimized, smart near zero dead times or resistor

adjustable dead times

► Split output gate drivers for adjustable turn on and turn off driver

strengths

► Accurate adjustable driver voltage and UVLO

► Low operating I_Q: 5 μA (48 V_INto 5 V_OUT

)

► Programmable frequency (100 kHz to 3 MHz)

► Phase lockable frequency (100 kHz to 3 MHz)

► Spread spectrum frequency modulation

Figure 1. Typical Application Circuit

► 28-lead (4 mm × 5 mm) side wettable QFN package

APPLICATIONS

► Industrial power systems

► Military avionics and medical systems

► Telecommunications power systems

GENERAL DESCRIPTION

The LTC7891 is a high performance, step-down, dc-to-dc switching

regulator controller that drives all N-channel synchronous gallium

nitride (GaN) field effect transistor (FET) power stages from input

voltages up to 100 V. The LTC7891 solves many of the challenges

traditionally faced when using GaN FETs. The LTC7891 simplifies

the application design while requiring no protection diodes and no

other additional external components compared to a silicon metal-

oxide semiconductor field effect transistor (MOSFET) solution.

The internal smart bootstrap switch prevents overcharging of the

BOOST pin to SW pin high-side driver supplies during dead times,

protecting the gate of the top GaN FET. The LTC7891 internally

optimizes the gate driver timing on both switching edges to achieve

smart near zero dead times, significantly improving efficiency and

allowing for high frequency operation, even at high input voltages.

Alternatively, the user can adjust the dead times with external

resistors for margin or to tailor the application.

Figure 2. Efficiency and Power Loss vs. Load Current

Note that throughout this data sheet, multifunction pins, such as

PLLIN/SPREAD, are referred to either by the entire pin name or

by a single function of the pin, for example, PLLIN, when only that

function is relevant.

The gate drive voltage of the LTC7891 can be precisely adjusted

from 4 V to 5.5 V to optimize performance, and to allow the use of

different GaN FETs, or even logic level MOSFETs.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog

Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to

change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

DOCUMENT FEEDBACK

TECHNICAL SUPPORT

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