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LTC2954IDDB-1#TRMPBF PDF预览

LTC2954IDDB-1#TRMPBF

更新时间: 2024-02-23 09:28:08
品牌 Logo 应用领域
凌特 - Linear 电源电路电源管理电路微处理器光电二极管控制器
页数 文件大小 规格书
16页 582K
描述
LTC2954 - Push Button On/Off Controller with µP Interrupt; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C

LTC2954IDDB-1#TRMPBF 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:HVSON,
针数:8Reach Compliance Code:compliant
风险等级:5.11可调阈值:YES
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUITJESD-30 代码:R-PDSO-N8
JESD-609代码:e3长度:3 mm
湿度敏感等级:1信道数量:1
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:0.8 mm最大供电电压 (Vsup):26.4 V
最小供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:2 mm
Base Number Matches:1

LTC2954IDDB-1#TRMPBF 数据手册

 浏览型号LTC2954IDDB-1#TRMPBF的Datasheet PDF文件第9页浏览型号LTC2954IDDB-1#TRMPBF的Datasheet PDF文件第10页浏览型号LTC2954IDDB-1#TRMPBF的Datasheet PDF文件第11页浏览型号LTC2954IDDB-1#TRMPBF的Datasheet PDF文件第13页浏览型号LTC2954IDDB-1#TRMPBF的Datasheet PDF文件第14页浏览型号LTC2954IDDB-1#TRMPBF的Datasheet PDF文件第15页 
LTC2954  
U U  
W U  
APPLICATIO S I FOR ATIO  
LTC2954-1, LTC2954-2 Versions  
without latching up the device. PB has an ESD HBM rating  
of±10kV. Ifthepushbuttonswitchconnectedto PBexhib-  
its high leakage current, then an external pull-up resistor  
The LTC2954-1 (high true EN) and LTC2954-2 (low true  
EN) differ only by the polarity of the high voltage (33V ABS  
MAX), enable pin. The LTC2954-1 EN pin is a low leakage  
hightrueopendrainoutputdesignedtodrivetheshutdown  
pin of DC/DC converters. The LTC2954-2 is a low leakage,  
low true open drain enable output designed to drive the  
gate of an external PFET. The LTC2954-2 provides a user  
manual power path control.  
to V is recommended. Furthermore, if the push button  
IN  
switch is physically located far from the LTC2954 PB pin,  
parasitic capacitances may couple onto the high imped-  
ance PB input. Additionally, parasitic series inductance  
may cause unpredictable ringing at the PB pin. Placing a  
5.1k resistor from the PB pin to the push button switch  
would mitigate parasitic inductance problems. Placing a  
0.1µF capacitor on the PB pin would lessen the impact of  
parasitic capacitive coupling.  
High Voltage Pins  
The V , PB and EN/EN pins can operate at voltages up to  
IN  
26.4V. PB can, additionally, operate below ground (6V)  
U
TYPICAL APPLICATIO S  
Voltage Monitoring with KILL Input  
The DC/DC converter shown has an internal pull-up cur-  
rent on its SHDN pin. A pull-up resistor on EN is thus not  
needed.  
The KILL pin can be used as a voltage monitor. Figure  
5 shows an application where the KILL pin has a dual  
function. It is driven by a low leakage open drain output  
of the µP. It is also connected to a resistive divider that  
Operation Without µP  
Figure 6 shows how to connect the KILL pin when there  
is no circuitry available to drive it. The minimum pulse  
width detected is 30µs. If there are glitches on the resis-  
tor pull-up voltage that are wider than 30µs and transition  
below 0.6V, then an appropriate bypass capacitor should  
monitors battery voltage (V ). When the battery voltage  
IN  
falls below the set value, the voltage at the KILL pin falls  
below 0.6V and the EN pin is quickly pulled low. Note that  
the resistor values should be as large as possible, but  
small enough to keep leakage currents from tripping the  
0.6V KILL comparator.  
be connected to the KILL pin. The optional C  
external  
PDT  
V
= 9V  
V
= 9V  
IN  
IN  
V
OUT  
3.3V  
V
IN  
3.3V  
V
IN  
V
OUT  
LT1767-3.3  
SHDN  
LT1767-3.3  
R3  
806k  
1%  
SHDN  
R2  
100k  
1%  
R1  
100k  
R1  
10k  
V
EN  
V
EN  
IN  
IN  
C4  
0.1µF  
C4  
0.1µF  
LTC2954-1  
LTC2954-1  
INT  
INT  
INT  
µP  
PB  
GND ONT  
KILL  
PDT  
PB  
GND ONT  
KILL  
PDT  
KILL  
(OPEN DRAIN)  
2954 F05  
+
C3*  
0.01µF  
C
*
C
*
PDT  
C
*
C
1µF  
*
PDT  
ONT  
ONT  
0.033µF  
1µF  
0.033µF  
*OPTIONAL  
2954 F06  
*OPTIONAL  
Figure 5. Input Voltage Monitoring with KILL Input  
Figure 6. No µP Application  
2954f  
12  

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