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LT1011IS8 PDF预览

LT1011IS8

更新时间: 2024-01-27 18:45:44
品牌 Logo 应用领域
凌特 - Linear 比较器
页数 文件大小 规格书
16页 209K
描述
Voltage Comparator

LT1011IS8 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.31放大器类型:COMPARATOR
最大平均偏置电流 (IIB):0.05 µA25C 时的最大偏置电流 (IIB):0.065 µA
最大输入失调电压:3000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C输出类型:OPEN-COLLECTOR
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):250
电源:+-15 V认证状态:Not Qualified
标称响应时间:150 ns座面最大高度:1.75 mm
子类别:Comparator供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm

LT1011IS8 数据手册

 浏览型号LT1011IS8的Datasheet PDF文件第1页浏览型号LT1011IS8的Datasheet PDF文件第2页浏览型号LT1011IS8的Datasheet PDF文件第4页浏览型号LT1011IS8的Datasheet PDF文件第5页浏览型号LT1011IS8的Datasheet PDF文件第6页浏览型号LT1011IS8的Datasheet PDF文件第7页 
LT1011/LT1011A  
ELECTRICAL CHARACTERISTICS  
The denotes the specifications which apply over the full operating temperature range, otherwide specifications are at TA = 25°C.  
VS = ±15V, VCM = 0V, RS = 0, V1 = –15V, output at pin 7 unless otherwise noted.  
LT1011AC/AI/AM  
LT1011C/I/M  
TYP MAX UNITS  
SYMBOL PARAMETER  
CONDITIONS  
MIN T TMAX  
MIN  
TYP  
MAX  
MIN  
VOS  
T  
Input Offset Voltage Drift  
(Note 6)  
*Large-Signal Voltage Gain RL = 1k to 15V,  
–10V VOUT 14.5V  
T
4
15  
4
25  
µV/°C  
V/mV  
V/mV  
dB  
AVOL  
200  
50  
500  
300  
115  
200  
50  
500  
300  
115  
RL = 500to 5V,  
0.5V VOUT 4.5V  
CMRR  
Common Mode  
Rejection Ratio  
94  
90  
*Input Voltage Range  
(Note 9)  
VS = ±15V  
VS = Single 5V  
–14.5  
0.5  
13  
3
–14.5  
0.5  
13  
3
V
V
tD  
*Response Time  
(Note 7)  
150  
250  
150  
250  
ns  
VOL  
*Output Saturation Voltage, VIN = 5mV, ISINK = 8mA, TJ 100°C  
0.25  
0.25  
0.70  
0.40  
0.45  
1.50  
0.25  
0.25  
0.70  
0.40  
0.45  
1.50  
V
V
V
V1 = 0  
VIN = 5mV, ISINK = 8mA  
VIN = 5mV, ISINK = 50mA  
*Output Leakage Current  
VIN = 5mV, V1 = –15V,  
VOUT = 35V (25V for LT1011C/I)  
0.2  
10  
500  
0.2  
10  
500  
nA  
nA  
*Positive Supply Current  
*Negative Supply Current  
3.2  
1.7  
4.0  
2.5  
3.2  
1.7  
4.0  
2.5  
mA  
mA  
µA  
*Strobe Current  
(Note 8)  
Minimum to Ensure Output  
Transistor is Off  
500  
500  
Input Capacitance  
6
6
pF  
Indicates parameters which are guaranteed for all supply voltages, including a single 5V supply. See Note 5.  
*
Note 1: Absolute Maximum Ratings are those values beyond which the  
life of a device may be impaired.  
Note 6: Drift is calculated by dividing the offset voltage difference  
measured at min and max temperatures by the temperature difference.  
Note 2: Inputs may be clamped to supplies with diodes so that  
maximum input voltage actually exceeds supply voltage by one diode  
drop. See Input Protection in the Applications Information section.  
Note 7: Response time is measured with a 100mV step and 5mV  
overdrive. The output load is a 500resistor tied to 5V. Time  
measurement is taken when the output crosses 1.4V.  
Note 3: TJMAX = 150°C.  
Note 4: Output is sinking 1.5mA with VOUT = 0V.  
Note 8: Do not short the STROBE pin to ground. It should be current  
driven at 3mA to 5mA for the shortest strobe time. Currents as low as  
500µA will strobe the LT1011A if speed is not important. External  
leakage on the STROBE pin in excess of 0.2µA when the strobe is “off”  
can cause offset voltage shifts.  
Note 5: These specifications apply for all supply voltages from a single  
5V to ±15V, the entire input voltage range, and for both high and low  
output states. The high state is ISINK 100µA, VOUT (V+ – 1V) and  
the low state is ISINK 8mA, VOUT 0.8V. Therefore, this specification  
defines a worst-case error band that includes effects due to common  
mode signals, voltage gain and output load.  
Note 9: See graph “Input Offset Voltage vs Common Mode Voltage.”  
3

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