Datasheet > LS842-SOIC-8L-ROHS

LS842-SOIC-8L-ROHS

更新时间： 2025-08-11 05:52:39

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
2页	159K
描述
Transistor,

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LS842-SOIC-8L-ROHS 数据手册

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LS840 LS841 LS842

LOW NOISE LOW DRIFT

LOW CAPACITANCE

MONOLITHIC DUAL N-CHANNEL JFET

FEATURES

LOW NOISE

e_n=8nV/Hz TYP.

LOW LEAKAGE

LOW DRIFT

I_G=10pA TYP.

I V_GS1-2/TI=5µV/ºC max.

IV_GS1-2I=2mV TYP.

LOW OFFSET VOLTAGE

ABSOLUTE MAXIMUM RATINGS¹

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

-55°C to +150°C

Operating Junction Temperature

Maximum Voltage and Current for Each Transistor¹

-V_GSSGate Voltage to Drain or Source 60V

SOIC

Top View

TO-71/78

Top View

I_G(f)

Gate Forward Current

10mA

Maximum Power Dissipation

Device Dissipation²@ Free Air - Total

400mW T_A=+25°C

ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)

SYMBOL

CHARACTERISTIC

LS840 LS841 LS842 UNITS CONDITIONS

I V_GS1-2/ TI max.

Drift vs. Temperature

µV/ºC

V_DG= 20V

I_D= 200µA

T_A= -55ºC to +125ºC

V_DG= 20V

IV_GS1-2I max.

Offset Voltage

SYMBOL

BV_GSS

CHARACTERISTIC³

Breakdown Voltage

Gate-to-Gate Breakdown

TRANSCONDUCTANCE

Full Conduction

MIN.

-60

TYP. MAX. UNITS CONDITIONS

V_DS= 0

I_D= -1nA

BV_GGO

±60

I_GGO= ±1µA I_D= 0

I_S= 0

G_fss

1000

500

4000

1000

µS

V_DG= 20V V_GS= 0

f = 1kHz

G_fs

Typical Conduction

V_DG= 20V I_D= 200µA

G_fs1

G_fs2

│

Mismatch Transconductance

Ratio

0.97

1.0

DRAIN CURRENT

I_DSS

Full Conduction

0.5

V_DG= 20V V_GS= 0

I_DSS1

I_DSS2

│

Drain Current Ratio

0.95

1.0

GATE-SOURCE

Pinchoff Voltage

Operating Range

GATE CURRENT

Operating

V_GS(off)

V_GS

-1

-2

-4.5

-4

V_DS= 20V I_D= 1nA

-0.5

V_DS= 20V I_D= 200µA

-I_G

V_DG= 20V I_D=200µA

-I_G

High Temperature

Reduced VDG

V_DG= 20V I_D=200µA T_A=+125ºC

V_DG= 10V I_D=200µA

-I_G

-I_GSS

At Full Conduction

100

V_DG= 20V V_DS=0

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201143 8/16/2012 Rev#A7 ECN# LS840 LS841 LS842

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