LS5912
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5912
FEATURES
The LS5912 are monolithic dual JFETs. The monolithic
Improved Direct Replacement for SILICONIX & NATIONAL 2N5912
dual chip design reduces parasitics and gives better
performance at very high frequencies while ensuring
extremely tight matching. These devices are an
excellent choice for use as wideband differential
amplifiers in demanding test and measurement
applications. The LS5912 is a direct replacement for
discontinued Siliconix and National 2N5912.
LOW NOISE (10KHz)
en~ 4nV/√Hz
gfs ≥ 4000µS
HIGH TRANSCONDUCTANCE (100MHz)
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
‐65°C to +150°C
‐55°C to +135°C
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
500mW
LS5912 Applications:
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
50mA
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
‐25V
‐25V
High-Speed Comparators
Impedance Converters and vibrations
detectors.
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
|VGS1 – VGS2
CHARACTERISTIC
Differential Gate to Source Cutoff Voltage
MIN
‐‐
TYP
‐‐
MAX
15
UNITS
mV
CONDITIONS
VDG = 10V, ID = 5mA
|
∆|VGS1 – VGS2 | / ∆T
Differential Gate to Source Cutoff
Voltage Change with Temperature
Gate to Source Saturation Current Ratio
‐‐
‐‐
40
µV/°C
VDG = 10V, ID = 5mA
TA = ‐55°C to +125°C
VDS = 10V, VGS = 0V
IDSS1 / IDSS2
0.95
‐‐
‐‐
‐‐
‐‐
1
20
1
%
nA
%
|IG1 – IG2
|
Differential Gate Current
VDG = 10V, ID = 5mA
TA = +125°C
VDS = 10V, ID = 5mA, f = 1kHz
gfs1 / gfs2
Forward Transconductance Ratio2
0.95
Click To Buy
CMRR
Common Mode Rejection Ratio
‐‐
85
‐‐
dB
VDG = 5V to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
VGS
CHARACTERISTICS
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Gate to Source Voltage
MIN.
‐25
‐1
‐‐
‐0.3
7
TYP.
‐‐
‐‐
0.7
‐‐
MAX.
UNITS
V
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 10V, ID = 1nA
IG = 1mA, VDS = 0V
VDG = 10V, IG = 5mA
VDS = 10V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 5mA
‐5
‐‐
‐4
IDSS
IGSS
Gate to Source Saturation Current3
‐‐
40
‐50
‐50
mA
Gate Leakage Current3
Gate Operating Current
‐‐
‐‐
‐1
‐1
pA
IG
gfs
Forward Transconductance
Output Conductance
4000
4000
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
7
10000
10000
100
150
5
1.2
1
20
µS
VDG = 10V, ID= 5mA
gos
CISS
CRSS
NF
en
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
pF
dB
VDG = 10V, ID = 5mA, f = 1MHz
VDG = 10V, ID = 5mA, f = 10kHz, RG = 100KΩ
VDG = 10V, ID = 5mA, f = 100Hz
Equivalent Input Noise Voltage
nV/√Hz
‐‐
4
10
VDG = 10V, ID = 5mA, f = 10kHz
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
Available Packages:
LS5912 in SOIC
LS5912 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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