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LS5909-TO-78-8L PDF预览

LS5909-TO-78-8L

更新时间: 2024-01-19 15:09:37
品牌 Logo 应用领域
凌特 - Linear /
页数 文件大小 规格书
2页 211K
描述
Transistor,

LS5909-TO-78-8L 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

LS5909-TO-78-8L 数据手册

 浏览型号LS5909-TO-78-8L的Datasheet PDF文件第2页 
LS5905 LS5906 LS5907  
LS5908 LS5909  
LOW LEAKAGE LOW DRIFT  
MONOLITHIC DUAL N-CHANNEL JFET  
FEATURES  
LOW DRIFT  
IΔVGS1-2/ΔT│=5µV/°C max.  
IG=150fA TYP.  
ULTRA LOW LEAKAGE  
LOW PINCHOFF  
VP=2V TYP.  
Case & Body  
ABSOLUTE MAXIMUM RATINGS1  
@ 25°C (unless otherwise noted)  
Maximum Temperatures  
Storage Temperature  
-55 to +150°C  
-55 to +150°C  
Operating Junction Temperature  
Maximum Voltage and Current for Each Transistor1  
-VGSS  
-IG(f)  
-IG  
Gate Voltage to Drain or Source 40V  
Top View  
SOIC  
Top View  
TO-78  
Gate Forward Current  
Gate Reverse Current  
10mA  
10µA  
Maximum Power Dissipation  
500mW2  
Device Dissipation @ TA=25ºC - Total  
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)  
SYMBOL CHARACTERISTIC LS5906 LS5907 LS5908 LS5909 LS5905 UNITS CONDITIONS  
│∆VGS1-2/∆T│max. Drift vs. Temperature  
5
10  
20  
40  
40  
µV/ºC  
VDG = 10V, ID=30µA  
TA = -55ºC to +125ºC  
VDG =10V ID=30µA  
│VGS1-2│max.  
-IG Max  
Offset Voltage  
5
1
1
2
5
5
1
1
2
5
10  
1
15  
1
15  
3
mV  
pA  
nA  
pA  
nA  
Operating  
-IG Max  
High Temperature  
Gate Reverse Current  
Gate Reverse Current  
1
1
3
TA=+125 ºC  
-IGSS Max  
-IGSS Max  
2
2
5
VDS=0V  
VGS=-20V  
5
5
10  
TA=+125 ºC  
SYMBOL  
BVGSS  
CHARACTERISTIC  
Breakdown Voltage  
Gate-to-Gate Breakdown  
TRANSCONDUCTANCE  
Full Conduction  
MIN.  
TYP. MAX. UNITS CONDITIONS  
-40  
-60  
--  
--  
--  
V
V
VDS= 0  
ID= -1µA  
ID= 0  
BVGGO  
±40  
IGG= ±1µA  
IS= 0  
Gfss  
70  
50  
--  
300  
100  
1
500  
200  
5
µS  
µS  
%
VDG= 10V  
VDG= 10V  
VGS= 0  
f = 1kHz  
Gfs  
Typical Operation  
ID= 30µA f = 1kHz  
3
Gfs1/Gfs2  
Transconductance Ratio  
DRAIN CURRENT  
Full Conduction  
IDSS  
60  
--  
400  
2
1000  
5
µA  
%
VDG= 10V  
VGS= 0  
3
IDSS1/IDSS2  
Drain Current Ratio  
GATE VOLTAGE  
VGS(off)  
VGS  
Gate-Source Cutoff Voltage  
Operating Range  
-0.6  
--  
-2  
--  
-4.5  
-4  
V
V
VDS= 10V  
VDS= 10V  
ID= 1nA  
ID= 30µA  
GATE CURRENT  
IGGO  
Gate-to-Gate Leakage  
--  
±1  
--  
pA  
VGG= 20V  
Linear Integrated Systems  
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
6/07/2012 Rev#A7 ECN# LS5905 LS5906 LS5907 LS5908 LS5909  

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