LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
LOW DRIFT
IΔVGS1-2/ΔT│=5µV/°C max.
IG=150fA TYP.
ULTRA LOW LEAKAGE
LOW PINCHOFF
VP=2V TYP.
Case & Body
ABSOLUTE MAXIMUM RATINGS1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
-55 to +150°C
Operating Junction Temperature
Maximum Voltage and Current for Each Transistor1
-VGSS
-IG(f)
-IG
Gate Voltage to Drain or Source 40V
Top View
SOIC
Top View
TO-78
Gate Forward Current
Gate Reverse Current
10mA
10µA
Maximum Power Dissipation
500mW2
Device Dissipation @ TA=25ºC - Total
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL CHARACTERISTIC LS5906 LS5907 LS5908 LS5909 LS5905 UNITS CONDITIONS
│∆VGS1-2/∆T│max. Drift vs. Temperature
5
10
20
40
40
µV/ºC
VDG = 10V, ID=30µA
TA = -55ºC to +125ºC
VDG =10V ID=30µA
│VGS1-2│max.
-IG Max
Offset Voltage
5
1
1
2
5
5
1
1
2
5
10
1
15
1
15
3
mV
pA
nA
pA
nA
Operating
-IG Max
High Temperature
Gate Reverse Current
Gate Reverse Current
1
1
3
TA=+125 ºC
-IGSS Max
-IGSS Max
2
2
5
VDS=0V
VGS=-20V
5
5
10
TA=+125 ºC
SYMBOL
BVGSS
CHARACTERISTIC
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
MIN.
TYP. MAX. UNITS CONDITIONS
-40
-60
--
--
--
V
V
VDS= 0
ID= -1µA
ID= 0
BVGGO
±40
IGG= ±1µA
IS= 0
Gfss
70
50
--
300
100
1
500
200
5
µS
µS
%
VDG= 10V
VDG= 10V
VGS= 0
f = 1kHz
Gfs
Typical Operation
ID= 30µA f = 1kHz
3
│Gfs1/Gfs2
│
Transconductance Ratio
DRAIN CURRENT
Full Conduction
IDSS
60
--
400
2
1000
5
µA
%
VDG= 10V
VGS= 0
3
│IDSS1/IDSS2
│
Drain Current Ratio
GATE VOLTAGE
VGS(off)
VGS
Gate-Source Cutoff Voltage
Operating Range
-0.6
--
-2
--
-4.5
-4
V
V
VDS= 10V
VDS= 10V
ID= 1nA
ID= 30µA
GATE CURRENT
IGGO
Gate-to-Gate Leakage
--
±1
--
pA
VGG= 20V
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
6/07/2012 Rev#A7 ECN# LS5905 LS5906 LS5907 LS5908 LS5909