LPD200P70

更新时间： 2024-01-29 11:15:54

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
3页	63K
描述
PACKAGED HIGH DYNAMIC RANGE PHEMT

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数据手册

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LPD200P70 数据手册

LP D2 0 0 P 7 0

P ACKAGED HIGH DYNAMIC RANGE P HEMT

FEATURES

20 dBm Output Power at 1-dB Compression at 18 GHz

9.5 dB Power Gain at 18 GHz

16 dB Small Signal Gain at 2 GHz

0.8 dB Noise Figure at 2 GHz

DES CRIP TION AND AP P LICATIONS

The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an

Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom”

Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure

and processing have been optimized for high dynamic range. The LPD200’s active areas are

passivated with Si₃N₄, and the P70 ceramic package is ideal for low-cost, high-performance

applications that require a surface-mount package.

Typical applications include high dynamic range receiver preamplifiers for commercial applications

including Cellular/PCS systems and other types of commercial wireless systems.

ELECTRICAL S P ECIFICATIONS @ T_{Am b ie n t}= 2 5 °C*

Parameter

Symbol

I_DSS

Test Conditions

Min

Typ

Max

Units

dBm

Saturated Drain-Source Current**

Power at 1-dB Compression

Power Gain at 1-dB Compression

Power-Added Efficiency

V_DS= 2 V; V_GS= 0 V

P-1dB

G-1dB

PAE

V_DS= 5 V; I_DS= 50% I_DSS

9.5

V_DS= 5 V; I_DS= 50% I_DSS

P_IN= 11 dBm

;

Noise Figure

0.7

V_DS= 3.3 V; I_DS= 25% I_DSS

f=2 GHz

;

Maximum Drain-Source Current

Transconductance

I_MAX

G_M

V_DS= 2 V; V_GS= 1 V

V_DS= 2 V; V_GS= 0 V

V_GS= -5 V

125

Gate-Source Leakage Current

Pinch-Off Voltage

I_GSO

V_P

V_DS= 2 V; I_DS= 1 mA

I_GS= 1 mA

-0.25

-6

-0.8

-7

-1.5

Gate-Source Breakdown

Voltage Magnitude

|V_BDGS

Gate-Drain Breakdown

Voltage Magnitude

|V_BDGD

I_GD= 1 mA

-8

-9

*frequency=18 GHz, unless otherwise noted

**Formerly binned as: LPD200P70-1 = 40-65 mA and LPD200P70–2 = 66-85 mA

P h o n e : (408) 988-1845

Fa x: (408) 970-9950

h ttp :// www.filss.com

Re vis e d : 1/20/01

Em a il: sales@filss.com

12 3

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