LP3000P100

更新时间： 2024-01-01 18:28:40

品牌	Logo	应用领域
FILTRONIC		晶体晶体管
页数	文件大小	规格书
3页	50K
描述
PACKAGED 2W POWER PHEMT

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技术参数
数据手册

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LP3000P100 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.74
Base Number Matches：	1

LP3000P100 数据手册

LP 3 0 0 0 P 1 0 0

P ACKAGED 2 W POWER P HEMT

FEATURES

33 dBm Output Power at 1-dB Compression at 15 GHz

8 dB Power Gain at 15 GHz

60% Power-Added Efficiency

DES CRIP TION AND AP P LICATIONS

The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a

0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial

structure and processing have been optimized for reliable high-power applications. The LP3000 also

features Si3N4 passivation and is available in die form or in other packages.

The LP3000P100 is designed for medium-power, linear amplification. This device is suitable for

applications in commercial and military environments, and it is appropriate to be used as a medium

power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high

efficiency amplifiers, and WLL systems.

ELECTRICAL S P ECIFICATIONS @ T_{Am b ie n t}= 2 5 °C

Parameter

Symbol

I_DSS

Test Conditions

Min

800

31.5

Typ

975

Max

Units

dBm

Saturated Drain-Source Current

Power at 1-dB Compression

Power Gain at 1-dB Compression

Power-Added Efficiency

V_DS= 2 V; V_GS= 0 V

1100

P-1dB

G-1dB

PAE

V_DS= 8 V; I_DS= 50% I_DSS

P_IN= 17 dBm

;

Maximum Drain-Source Current

Transconductance

I_MAX

G_M

V_DS= 2 V; V_GS= 1 V

V_DS= 2 V; V_GS= 0 V

V_GS= -5 V

1700

900

700

Gate-Source Leakage Current

Pinch-Off Voltage

I_GSO

V_P

130

-2.0

V_DS= 2 V; I_DS= 5 mA

I_GS= 8 mA

-0.25

-12

-1.2

-15

Gate-Source Breakdown

Voltage Magnitude

|V_BDGS

Gate-Drain Breakdown

Voltage Magnitude

|V_BDGD

I_GD= 8 mA

-12

-16

frequency=15 GHz

P h o n e : (408) 988-1845

Fa x: (408) 970-9950

h ttp :// www.filss.com

Re vis e d : 1/20/01

Em a il: sales@filss.com

12 3

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