Datasheet > LMX2119M

LMX2119M

更新时间： 2024-01-20 08:35:13

品牌	Logo	应用领域
美国国家半导体 - NSC		放大器功率放大器
页数	文件大小	规格书
6页	124K
描述
1.9 GHz Power Amplifier

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技术参数
数据手册

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LMX2119M 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	24.5 dB
最大输入功率 (CW)：	4 dBm	最大工作频率：	1900 MHz
最小工作频率：	1880 MHz	最高工作温度：	65 °C
最低工作温度：	-25 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
最大电压驻波比：	2

LMX2119M 数据手册

PRELIMINARY

June 1996

LMX2119 1.9 GHz Power Amplifier

General Description

Features

Single 3V supply operation

Class A bias; 30% power added efficiency

The LMX2119 1.9 GHz Power Amplifier is a monolithic, inte-

grated power amplifier suitable for use in the Digital Europe-

an Cordless Telecommunications (DECT) system as well as

other mobile telephony and wireless communications appli-

cations. It is fabricated using an advanced Gallium Arsenide

24.5 dB power gain; 26.5 dBm output power

50X input/output impedance

350 mA current consumption at 3.6V

technology that allows single supply ( 3V) operation.

The LMX2119 consists of two MESFETs cascaded to pro-

vide 24.5 dB of power gain. The output power at 3.6V is

Applications

Digital European Cordless Telecommunications (DECT)

26.5 dBm with an input power level of 2 dBm. The input

Portable wireless communications (PCS/PCN, cordless)

VSWR of the power amplifier remains constant in the ON

and OFF state.

Wireless local area networks (WLANs)

Other wireless communications systems

The LMX2119 is available in a 16-pin SOIC surface mount

plastic package.

Functional Block Diagram

TL/W/12686–1

This data sheet contains the design specifications for product development.

Specifications may change in any manner without notice.

1996 National Semiconductor Corporation

TL/W/12686

RRD-B30M27/Printed in U. S. A.

http://www.national.com

12 3 4 5 6

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