5秒后页面跳转
LMV358DMR2G PDF预览

LMV358DMR2G

更新时间: 2024-01-25 05:26:29
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 放大器PC光电二极管
页数 文件大小 规格书
21页 930K
描述
DUAL OP-AMP, 9000uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO8, LEAD FREE, MICRO-8

LMV358DMR2G 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:SOIC包装说明:LEAD FREE, MICRO-8
针数:8Reach Compliance Code:unknown
风险等级:5.41Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER标称共模抑制比:65 dB
最大输入失调电压:9000 µVJESD-30 代码:S-PDSO-G8
JESD-609代码:e3长度:3 mm
湿度敏感等级:NOT SPECIFIED功能数量:2
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:COMMERCIAL座面最大高度:1.1 mm
标称压摆率:1 V/us子类别:Operational Amplifier
供电电压上限:5.5 V标称供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:1000 kHz宽度:3 mm
Base Number Matches:1

LMV358DMR2G 数据手册

 浏览型号LMV358DMR2G的Datasheet PDF文件第1页浏览型号LMV358DMR2G的Datasheet PDF文件第2页浏览型号LMV358DMR2G的Datasheet PDF文件第3页浏览型号LMV358DMR2G的Datasheet PDF文件第5页浏览型号LMV358DMR2G的Datasheet PDF文件第6页浏览型号LMV358DMR2G的Datasheet PDF文件第7页 
LMV321, LMV358, LMV324  
MAXIMUM RATINGS  
Symbol  
Rating  
Value  
5.5  
Unit  
V
V
S
Supply Voltage (Operating Range V = 2.7 V to 5.5 V)  
S
V
IDR  
V
ICR  
Input Differential Voltage  
$Supply Voltage  
0.5 to (V+) + 0.5  
10  
V
Input Common Mode Voltage Range  
V
Maximum Input Current  
mA  
t
Output Short Circuit (Note 1)  
Continuous  
150  
So  
T
Maximum Junction Temperature (Operating Range 40°C to 85°C)  
°C  
J
q
Thermal Resistance:  
°C/W  
JA  
SC70  
280  
238  
Micro8  
TSOP5  
333  
UDFN8 (1.2 mm x 1.8 mm x 0.5 mm)  
350  
SOIC8  
212  
SOIC14  
156  
TSSOP14  
190  
T
Storage Temperature  
65 to 150  
235  
°C  
°C  
V
stg  
Mounting Temperature (Infrared or Convection 20 sec)  
V
ESD  
ESD Tolerance  
LMV321  
Machine Model  
Human Body Model  
LMV358/324  
100  
1000  
Machine Model  
Human Body Mode  
100  
2000  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may  
affect device reliability.  
1. Continuous shortcircuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction  
temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+  
or Vwill adversely affect reliability.  
http://onsemi.com  
3
 

与LMV358DMR2G相关器件

型号 品牌 描述 获取价格 数据表
LMV358DR TI LOW-VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

获取价格

LMV358-DR HMSEMI 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter

获取价格

LMV358DR2G ROCHESTER DUAL OP-AMP, 9000uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO8, LEAD FREE, SOIC-8

获取价格

LMV358DR2G ONSEMI Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational Amplifiers

获取价格

LMV358G-D08-T UTC GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

获取价格

LMV358G-P08-R UTC GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

获取价格