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LM883AE PDF预览

LM883AE

更新时间: 2022-11-14 00:09:00
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
27页 884K
描述
Low Power Quad Operational Amplifiers

LM883AE 数据手册

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Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Supply Voltage, V+  
Differential Input Voltage  
Input Voltage  
32Vdc or +16Vdc  
32Vdc  
−0.3Vdc to +32Vdc  
Input Current  
<
(VIN −0.3Vdc) (Note 4)  
50 mA  
Power Dissipation (Note 2)  
CERDIP  
1260mW  
700mW  
1350mW  
700mW  
CERPACK  
LCC  
CERAMIC SOIC  
Output Short-Circuit to GND  
(One Amplifier) (Note 3)  
V+ 15Vdc and TA = 25˚C  
Operating Temperature Range  
Maximum Junction Temperature  
Storage Temperature Range  
Lead Temperature (Soldering, 10 seconds)  
Thermal Resistance ThetaJA  
CERDIP (Still Air)  
(500LF/Min Air flow)  
CERPACK (Still Air)  
(500LF/Min Air flow)  
LCC (Still Air)  
Continuous  
−55˚C TA +125˚C  
150˚C  
−65˚C TA +150˚C  
260˚C  
103 C/W  
51 C/W  
176 C/W  
116 C/W  
91 C/W  
66 C/W  
176 C/W  
116 C/W  
(500LF/Min Air flow)  
CERAMIC SOIC (Still Air)  
(500LF/Min Air flow)  
ThetaJC  
CERDIP  
19 C/W  
18 C/W  
24 C/W  
18 C/W  
CERPACK  
LCC  
CERAMIC SOIC  
Package Weight (Typical)  
CERDIP  
TBD  
TBD  
CERPACK  
LCC  
TBD  
CERAMIC SOIC  
410mg  
250V  
ESD Tolerance (Note 5)  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed  
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test  
conditions.  
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package  
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax -  
TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.  
Note 3: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output  
current is approximately 40mA independent of the magnitude of V+. At values of supply voltage in excess of +15Vdc, continuous short-circuits can exceed the power  
dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.  
Note 4: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP  
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action  
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+ voltage level (or to ground for a large overdrive) for the time  
duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns  
to a value greater than -0.3Vdc (at 25 C).  
Note 5: Human body model, 1.5 kin series with 100 pF.  
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