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LM4990ITL PDF预览

LM4990ITL

更新时间: 2024-02-29 08:41:07
品牌 Logo 应用领域
美国国家半导体 - NSC 商用集成电路放大器功率放大器
页数 文件大小 规格书
19页 724K
描述
2 Watt Audio Power Amplifier with Selectable Shutdown Logic Level

LM4990ITL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TSSOP, TSSOP10,.19,20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:12 weeks
风险等级:0.85商用集成电路类型:AUDIO AMPLIFIER
JESD-30 代码:S-PDSO-G8JESD-609代码:e3
长度:3 mm湿度敏感等级:1
信道数量:1功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C标称输出功率:2 W
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP10,.19,20封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
电源:2.6/5 V认证状态:Not Qualified
座面最大高度:1.1 mm子类别:Audio/Video Amplifiers
最大压摆率:10 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.2 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mmBase Number Matches:1

LM4990ITL 数据手册

 浏览型号LM4990ITL的Datasheet PDF文件第2页浏览型号LM4990ITL的Datasheet PDF文件第3页浏览型号LM4990ITL的Datasheet PDF文件第4页浏览型号LM4990ITL的Datasheet PDF文件第6页浏览型号LM4990ITL的Datasheet PDF文件第7页浏览型号LM4990ITL的Datasheet PDF文件第8页 
Electrical Characteristics VDD = 3V (Notes 1, 2)  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA  
25˚C. (Continued)  
=
LM4990  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical  
(Note 6)  
425  
Limit  
(Notes 7, 9)  
Output Power (8)  
(4)  
THD+N = 1% (max); f = 1kHz  
THD+N = 1% (max); f = 1kHz  
mW  
mW  
ms  
%
Po  
600  
TWU  
Wake-up time  
75  
THD+N+N Total Harmonic Distortion+Noise  
Po = 0.25Wrms; f = 1kHz  
Vripple = 200mV sine p-p  
Input terminated with 10Ω  
0.1  
62 (f =  
PSRR  
Power Supply Rejection Ratio  
217Hz)  
55  
dB (min)  
68 (f = 1kHz)  
Electrical Characteristics VDD = 2.6V (Notes 1, 2)  
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25˚C.  
LM4990  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical  
(Note 6)  
2.0  
Limit  
(Notes 7, 9)  
VIN = 0V, Io = 0A, No Load  
VIN = 0V, Io = 0A, 8Load  
VSD = VSD Mode (Note 8)  
VSD MODE = VDD  
mA  
IDD  
Quiescent Power Supply Current  
3.0  
mA  
ISD  
Shutdown Current  
0.1  
µA  
VSDIH  
VSDIL  
VSDIH  
VSDIL  
VOS  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Shutdown Voltage Input High  
Shutdown Voltage Input Low  
Output Offset Voltage  
1.0  
V
VSD MODE = VDD  
0.9  
V
V
VSD MODE = GND  
1.2  
VSD MODE = GND  
1.0  
V
5
50  
9.7  
7.0  
mV (max)  
k(max)  
k(min)  
ROUT  
Resistor Output to GND (Note 10)  
8.5  
Po  
Output Power ( 8)  
( 4)  
THD+N = 1% (max); f = 1kHz  
THD+N = 1% (max); f = 1kHz  
300  
400  
70  
mW  
TWU  
Wake-up time  
ms  
%
THD+N+N Total Harmonic Distortion+Noise  
Po = 0.15Wrms; f = 1kHz  
Vripple = 200mV sine p-p  
Input terminated with 10Ω  
0.1  
51 (f =  
PSRR Power Supply Rejection Ratio  
217Hz)  
dB  
51 (f = 1kHz)  
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.  
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which  
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit  
is given, however, the typical value is a good indication of device performance.  
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T  
, θ , and the ambient temperature T . The maximum  
A
JMAX JA  
allowable power dissipation is P  
= (T  
–T )/θ or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4990, see power derating  
DMAX  
JMAX A JA  
curves for additional information.  
Note 4: Human body model, 100pF discharged through a 1.5kresistor.  
Note 5: Machine Model, 220pF – 240pF discharged through all pins.  
Note 6: Typicals are measured at 25˚C and represent the parametric norm.  
Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).  
Note 8: For micro SMD only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase I by a maximum of 2µA.  
SD  
Note 9: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.  
Note 10: R  
is measured from the output pin to ground. This value represents the parallel combination of the 10koutput resistors and the two 20kresistors.  
ROUT  
Note 11: If the product is in Shutdown mode and V exceeds 6V (to a max of 8V V ), then most of the excess current will flow through the ESD protection circuits.  
DD  
DD  
If the source impedance limits the current to a max of 10mA, then the device will be protected. If the device is enabled when V is greater than 5.5V and less than  
DD  
6.5V, no damage will occur, although operation life will be reduced. Operation above 6.5V with no current limit will result in permanent damage.  
Note 12: Maximum power dissipation in the device (P  
) occurs at an output power level significantly below full output power. P  
can be calculated using  
DMAX  
DMAX  
Equation 1 shown in the Application Information section. It may also be obtained from the power dissipation graphs.  
5
www.national.com  

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