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LL6263 PDF预览

LL6263

更新时间: 2024-02-27 16:26:14
品牌 Logo 应用领域
威世 - VISHAY 整流二极管肖特基二极管
页数 文件大小 规格书
2页 88K
描述
Schottky Diodes

LL6263 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.41 V
最大非重复峰值正向电流:2 A元件数量:1
最高工作温度:125 °C最大重复峰值反向电压:60 V
最大反向恢复时间:0.001 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

LL6263 数据手册

 浏览型号LL6263的Datasheet PDF文件第2页 
LL5711 and LL6263  
Schottky Diodes  
Features  
• For general purpose applications  
MiniMELF (SOD-80C)  
• Metal-on-silicon Schottky barrier device which is  
protected by a PN junction guard ring.  
Cathode Band  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices, steer-  
ing, biasing and coupling diodes for fast switching  
and low logic level applications.  
.063 (1.6)  
.051 (1.3)  
Dia.  
• This diode is also available in the DO-35 case  
with type designation 1N5711 and 1N6263.  
.019 (0.48)  
.011 (0.28)  
.146 (3.7)  
.130 (3.3)  
Mechanical Data  
Case: MiniMELF Glass Case (SOD-80C)  
Weight: approx. 0.05g  
Dimensions in inches and (millimeters)  
Cathode Band Color: Green  
Packaging Codes/Options:  
D1/10K per 13” reel (8mm tape), 20K/box  
D2/2.5K per 7” reel (8mm tape), 20K/box  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
Unit  
LL5711  
LL6263  
70  
60  
Peak Inverse Voltage  
Power Dissipation (Infinite Heatsink)  
VRRM  
V
Ptot  
IFSM  
Tj  
400(1)  
mW  
A
Maximum Single Cycle Surge 10µs Square Wave  
Junction Temperature  
2.0  
125  
°C  
°C  
Storage Temperature Range  
TS  
–55 to +150  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
V(BR)R  
IR  
Test Condition  
Min  
Typ  
Max  
Unit  
V
LL5711  
LL6263  
70  
60  
Reverse Breakdown Voltage  
Leakage Current  
IR = 10µA  
VR = 50V  
200  
nA  
V
IF = 1.0mA  
IF = 15mA  
0.41  
1.0  
Forward Voltage Drop  
Junction Capacitance  
Reverse Recovery Time  
VF  
Ctot  
VR = 0V, f = 1MHz  
2.2  
pF  
ns  
IF = IR = 5mA,  
recover to 0.1IR  
trr  
1
Note: (1) Valid provided that electrodes are kept at ambient temperature.  
10/6/00  

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