Datasheet > LL4154

LL4154

更新时间： 2024-09-23 03:51:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		小信号开关二极管
页数	文件大小	规格书
3页	123K
描述
SMALL SIGNAL SWITCHING DIODE

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LL4154 数据手册

GALAXY ELECTRICAL

LL4154

REVERSE VOLTAGE : 25 V

CURRENT: 0.15 A

SMALL SIGNAL SWITCHING DIODE

FEATURES

MINI-MELF

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

Cathode indification

MECHANICAL DATA

0.4 0.1

3.4 ^+0.3

Case: MINI-MELF,glass case

-0.1

Polarity: Color band denotes cathode

Weight: 0.031 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

LL4154

Reverse voltage

Peak reverse voltage

Average forw ard rectified current

half w ave rectification w ith resistive load

V_R=0V

V_R

V_RM

I_F(AV)

150¹⁾

Forw ard surge current @ t_P=1m s

2.0

I_FSM

P_tot

T_J

500¹⁾

Pow er dissipation

@ T =

Junction temperature

Storage temperature range

1)Valid provided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

175

-55 --- +175

T_STG

ELECTRICAL CHARACTERISTICS

MIN

TYP

MAX

1.0

UNITS

Forw ard voltage @ I_F=30mA

Leakage current

V_F

@ V_R=25V

@ V_R=25V T_J=150

100

μA

I_R

Capacitance

@ V =0V,f=1MH ,V_HF=50mV

4.0

Reverse breakdown^Rvoltage

tested with 5μA pulses

V_(BR)R

t_rr

Reverse recovery time

fromI_F=10mA to I_R=10mA to I_R=1mA

fromI_F=10mA to I_R=1mA, V_R=6V. R =100Ω.

Thermal resistance junction to ambient

Rectification efficiency @ 100MHz,V_RF=2V

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

K/W

500¹⁾

R_θJA

0.45

ηv

www.galaxycn.com

Document Number 0268025

BLGALAXY ELECTRICAL

12 3

中文翻译

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