LL42

更新时间： 2024-01-15 12:13:44

品牌	Logo	应用领域
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页数	文件大小	规格书
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描述
SCHOTTKY BARRIER DIODES

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中文翻译

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技术参数
数据手册

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LL42 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

LL42 数据手册

SCHOTTKY BARRIER DIODES

LL42 - LL43

MiniMELF (SOD-80C)

FEATURES :

Cathode Mark

• For general purpose applications.

• This diode features very low turn-on voltage and

fast switching. This device is protected by a PN

junction guard ring against excessive voltage, such

as electrostatic discharges

• These diodes are also available in the DO-35

case with type designations BAT42 to BAT43

• Pb / RoHS Free

φ 0.063 (1.64)

0.055 (1.40)

0.019(0.48)

0.011(0.28)

0.142(3.6)

0.134(3.4)

Mounting Pad Layout

0.098 (2.50)

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80C)

Weight: approx. 0.05g

Max.

0.049 (1.25)Min.

0.079 (2.00)Min.

0.197 (5.00)

REF

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25°C ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

V_RRM

I_F

Repetitive Peak Reverse Voltage

Continuous Forward Current

200⁽¹⁾

500⁽¹⁾

I_FRM

I_FSM

Repetitive Peak Forward Current at tp < 1s,

Forward Surge Current at tp < 10 ms,

Power Dissipation ,Ta = 65 °C

4⁽¹⁾

200⁽¹⁾

°C/W

°C

300⁽¹⁾

Thermal Resistance Junction to Ambient Air

Junction Temperature

R_θ

T_J

T_S

125

Ambient Operating Temperature Range

Storage temperature range

-55 to + 125

-65 to + 150

°C

Note: (1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics (T_J= 25 °C unless otherwise noted)

Test Condition

Min

Typ

Max

Unit

Parameter

Reverse Breakdown Voltage

Symbol

V_(BR)R

I_R= 100 μA (pulsed)

V_R= 25 V

Reverse Current

0.5

I_R

µA

V_R= 25 V , T_J= 100 °C

I_F= 200mA

100

1.00

0.40

0.65

0.33

0.45

Pulse Test tp <300μs , δ <2%

LL42 , LL43

LL42

I_F= 10mA

Forward Voltage

V_F

I_F= 50mA

LL42

Pulse Test tp <300μs , δ <2%

I_F= 2mA

LL43

0.26

I_F= 15mA

LL43

V_R= 1V, f = 1MHz

I_F= 10mA, I_R= 10mA ,

to I_R= 1mA, R_L= 100 Ω

Diode Capacitance

Trr

Reverse Recovery Time

Page 1 of 1

Rev. 03 : May 8, 2006

中文翻译

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