Datasheet > LL41

LL41

更新时间： 2024-11-28 05:41:59

品牌	Logo	应用领域
SYNSEMI		肖特基二极管
页数	文件大小	规格书
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描述
SCHOTTKY BARRIER DIODE

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LL41 数据手册

SCHOTTKY BARRIER DIODE

LL41

MiniMELF (SOD-80C)

V_RRM: 100V

Cathode Mark

f 0.063 (1.64)

0.055 (1.40)

FEATURES :

• For general purpose applications

• This diode features low turn-on voltage and high

breakdown voltage. This device is protected by a

PN junction guard ring against excessive voltage,

such as electrostatic discharges

0.019(0.48)

0.011(0.28)

0.142(3.6)

0.134(3.4)

• This diode is also available in the DO-35 case with

type designation BAT41.

Mounting Pad Layout

0.098 (2.50)

Max.

• Pb / RoHS Free

0.049 (1.25)Min.

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80C)

Weight: approx. 0.05g

0.079 (2.00)Min.

0.197 (5.00)

REF

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

V_RRM

I_F

Value

Unit

Repetitive Peak Reverse Voltage

Continuous Forward Current

Repetitive Peak Forward Current at tp < 1s

Forward Surge Current at tp = 10 ms,

Power Dissipation

100

100 ⁽¹⁾

350 ⁽¹⁾

750 ⁽¹⁾

I_FRM

I_FSM

400⁽¹⁾

300⁽¹⁾

Thermal Resistance Junction to Ambient Air

Junction Temperature

R_q

°C/W

°C

T_J

T_S

125

Ambient Operating Temperature Range

Storage temperature range

-65 to + 125

-65 to + 150

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

I_R= 100 mA

V_R= 50 V

Min

Typ

Max

Unit

Parameter

Symbol

V_(BR)R

Reverse Breakdown Voltage ⁽²⁾

100

110

100

Reverse Current ⁽²⁾

I_R

V_R= 50 V , T_J= 100 °C

I_F= 1mA

0.4

0.45

1.0

(2)

V_F

Forward Voltage

I_F= 200mA

V_R= 1 V, f = 1MHz

I_F= 10mA, I_R= 10mA,

to I_R= 1mA , R_L= 100W

Diode Capacitance

Trr

Reverse Recovery Time

Note: (1) Valid provided that electrodes are kept at ambient temperature

(2) Pulse test, tp = 300ms

Page 1 of 1

Rev. 02 : March 24, 2005

中文翻译

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