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LL2/D1 PDF预览

LL2/D1

更新时间: 2024-02-07 18:07:03
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
6页 149K
描述
Zener Diode, 2.15V V(Z), 6.98%, 0.3W, Silicon, Unidirectional, GLASS, MINIMELF-2

LL2/D1 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.6
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:30 Ω
JESD-30 代码:O-LELF-R2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
认证状态:Not Qualified标称参考电压:2 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
最大电压容差:6.98%工作测试电流:5 mA
Base Number Matches:1

LL2/D1 数据手册

 浏览型号LL2/D1的Datasheet PDF文件第2页浏览型号LL2/D1的Datasheet PDF文件第3页浏览型号LL2/D1的Datasheet PDF文件第4页浏览型号LL2/D1的Datasheet PDF文件第5页浏览型号LL2/D1的Datasheet PDF文件第6页 
LL1.5 to LL5.1  
Vishay Semiconductors  
VISHAY  
Voltage Stabilizers  
Features  
• Silicon Planar Stabilizer Diodes  
• Monolithic integrated analog circuits in MiniMELF  
case, designed for small power stabilizer and limi-  
tation circuits, providing low dynamic resistance  
and high-quality  
17205  
stabilization performance as well as low noise. In  
the reverse direction, these devices show the  
behavior of forward-biased silicon diodes.  
Mechanical Data  
Case: MiniMELF Glass Case (SOD-80C)  
Weight: approx. 50 mg  
Cathode band color: Blue  
Packaging codes/options:  
D1 / 10k per 13 " reel (8 mm tape), 20k/box  
D2 / 2.5k per 7 " reel (8 mm tape), 20k/box  
• The end of the device marked with the cathode  
ring is to be connected: LL1.5 and LL2 to the neg-  
ative pole of the supply voltage; LL2.4 thru LL5.1  
to the positive pole of the supply voltage  
• These diodes are also available in DO-35 case  
with the type designation ZTE1.5 - ZTE 5.1.  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
100  
Unit  
Operating Current (see Table  
"Characteristics")  
Inverse Current  
I
mA  
mW  
°C  
F
1)  
Power dissipation  
T
= 25 °C  
P
A
tot  
300  
Junction temperature  
Storage temperature range  
T
150  
J
T
- 55 to + 150  
°C  
S
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
= 5 mA  
Symbol  
Value  
Unit  
-4  
Temperature Coefficient of the  
stabilized voltage  
I
α
Z
VZ  
10 /°C  
-4  
α
α
α
VZ  
VZ  
10 /°C  
-4  
10 /°C  
-4  
VZ  
10 /°C  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
θJA  
400  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
= 10 mA  
Symbol  
Min  
Typ.  
Max  
1.1  
Unit  
Forward Voltage  
I
V
V
F
F
Document Number 85814  
Rev. 2, 15-Jul-03  
www.vishay.com  
1

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