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L9610 PDF预览

L9610

更新时间: 2024-01-02 21:16:00
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 控制器
页数 文件大小 规格书
12页 200K
描述
PWM POWER MOS CONTROLLER

L9610 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:MICRO, SO-16
针数:16Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.82Is Samacsys:N
模拟集成电路 - 其他类型:SWITCHING CONTROLLER控制模式:CURRENT-MODE
控制技术:PULSE WIDTH MODULATION最大输入电压:16 V
最小输入电压:6 VJESD-30 代码:R-PDSO-G16
JESD-609代码:e4长度:9.9 mm
功能数量:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Switching Regulator or Controllers表面贴装:YES
切换器配置:SINGLE最大切换频率:200 kHz
技术:MOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

L9610 数据手册

 浏览型号L9610的Datasheet PDF文件第2页浏览型号L9610的Datasheet PDF文件第3页浏览型号L9610的Datasheet PDF文件第4页浏览型号L9610的Datasheet PDF文件第6页浏览型号L9610的Datasheet PDF文件第7页浏览型号L9610的Datasheet PDF文件第8页 
L9610C - L9611C  
After the overcurrent protection time is reached, the  
powerMOS is switched-off ; this condition is latched  
by settingan internalflip-flop and is externallymoni-  
tored by the low state of the MON pin.  
In both cases the thresholds are provided with suit-  
able hysteresis values.  
The loaddumpprotection functionallows the device  
to withstand - for a limited time - high overvoltages.  
It consists of an active clamping diode which limits  
the circuit supply voltage to VCLAMP andan external  
current limiting resistor R1. The maximum pulse  
supply current (see abs. max. ratings is equal to  
0.3A. Thereforethe maximum load dump voltage is  
given by :  
To resetthelatchthe supplyvoltage hasto fallbelow  
VSL or the device must be switched off.  
UNDER AND OVERVOLTAGE SENSE WITH  
LOAD DUMP PROTECTION  
The undervoltagedetection feature resetsthe timer  
and switches off the output driving signal when the  
supply voltage is less than VSL.  
VDUMP = VSC + 0.3R1  
In this condition the gate of the powerMOS is held  
at the GND pin potential and thus the load voltage  
is :  
If the supply voltage exceeds the max operating  
supply voltage value, an internal comparator dis-  
ables the charge pump, the oscillator and the exter-  
nal powerMOS.  
VL = Vs - VCLAMP - VGS  
Figure 1 : Typical Transfer Curve.  
5/12  

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