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L9610 PDF预览

L9610

更新时间: 2024-02-28 02:38:40
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 控制器
页数 文件大小 规格书
12页 200K
描述
PWM POWER MOS CONTROLLER

L9610 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:MICRO, SO-16
针数:16Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.82Is Samacsys:N
模拟集成电路 - 其他类型:SWITCHING CONTROLLER控制模式:CURRENT-MODE
控制技术:PULSE WIDTH MODULATION最大输入电压:16 V
最小输入电压:6 VJESD-30 代码:R-PDSO-G16
JESD-609代码:e4长度:9.9 mm
功能数量:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Switching Regulator or Controllers表面贴装:YES
切换器配置:SINGLE最大切换频率:200 kHz
技术:MOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

L9610 数据手册

 浏览型号L9610的Datasheet PDF文件第1页浏览型号L9610的Datasheet PDF文件第2页浏览型号L9610的Datasheet PDF文件第3页浏览型号L9610的Datasheet PDF文件第5页浏览型号L9610的Datasheet PDF文件第6页浏览型号L9610的Datasheet PDF文件第7页 
L9610C - L9611C  
ELECTRICAL CHARACTERISITCS (Tamb = – 40 °C to 85 °C ; 6 V < VS < 16 V unless otherwise specified)  
Symbol  
VS  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
16  
6
Unit  
V
Operating Supply Voltage  
Quiescent Current  
6
Iq  
2.5  
32  
mA  
V
VSC  
VSH  
VSL  
VR  
Internal Supply Voltage Clamp  
Supply Voltage High Threshold  
Supply Voltage Low Threshold  
Reference Voltage  
IS = 200mA  
28  
16  
4
36  
21  
6
18.5  
5
V
V
3.3  
3.5  
3.7  
1
V
IR  
Reference Current  
VR 100mV  
mA  
VIN/VR  
nF/s  
nFV/ms  
VINL  
KF  
Input Low Threshold  
0.13  
800  
3
0.15  
5
0.2  
2500  
9
Oscillator Freq. Constant  
Note 1  
Note 2  
KS  
Gate Voltage Slew Rate  
Constant  
KT  
VSi  
Protection Time Delay Constant Note 3  
Sense Input Volt.  
0.12  
80  
8
0.44  
120  
16  
ms/nF  
mV  
V
100  
– 1  
VGON  
VGOFF  
IIN  
Gate Driving Volt. above VS  
Gate Voltage in OFF Condition  
Input Current  
VS = 16V  
IG = 100 µA  
1.2  
V
– 5  
2.0  
µA  
V
VENL  
VENH  
IEN  
Low Enable Voltage  
High Enable Voltage  
Enable Input Current  
Slew Rate  
0.8  
2
V
µA  
V/µs  
V
SR  
Without CS  
0.5  
VMONsat  
Saturation Voltage (pin 12)  
IMON =  
1.5  
2.5 mA  
Notes : 1. fo = KF/CF.  
2. dVG/dt = Ks/Cs.  
3. tprot = KT CT.  
FUNCTIONAL DESCRIPTION  
PULSE WIDTH COMPARATOR  
GROUND COMPATIBLE TRIANGLE  
OSCILLATOR  
A ground compatible comparator generates the  
PWM signal which controls the gate of the external  
powerMOS.  
The triangle oscillator provides the switching fre-  
quencyfo setby theexternalcapacitorCF according  
to :  
The slopes of the leading and trailing edges of the  
gate driving signal are defined by the external ca-  
pacitor CS according to :  
fo = KF/CF  
If the pin PWL (power limitation) is connected to  
ground and Vs is higher than the PWL threshold  
voltage, the duty cycle and the fo frequencyare re-  
duced : this allows to transfer a costantpower to the  
load (see fig. 2).  
dVG/dt = KS/CS  
This feature allows to optimize the switching speed  
for the power and RFI performance best suited for  
the application.  
TIMER AND PROTECTION LATCH  
The lower limit of the duty cycle is fixed at 15 % of  
the ratio between the input and the reference vol-  
tage(see fig. 1). Input voltageslower than this value  
disable the internal oscillator signal and therefore  
the gate driver.  
When an overcurrent occurs, the device starts  
charging the external capacitor CT ; the protection  
time is set according to :  
.
tprot = KT CT  
4/12  

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